MUN5312DW1T2 ON Semiconductor, MUN5312DW1T2 Datasheet - Page 16

• Manufacturer Part Number: MUN5312DW1T2
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of MUN5312DW1T2

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR
I
5
C
/I
B
V
R
= 10
10
Figure 54. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 52. V
15
, COLLECTOR CURRENT (mA)
−25°C
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 56. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= −25°C
75°C
35
10
f = 1 MHz
I
T
I
E
C
A
40
, COLLECTOR CURRENT (mA)
= 0 V
C
= 25°C
25°C
40
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45
20
50
50
16
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 55. Output Current versus Input Voltage
75°C
T
V
A
O
1
= −25°C
T
= 0.2 V
40
A
= −25°C
2
Figure 53. DC Current Gain
I
25°C
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10