MUN5312DW1T2 ON Semiconductor, MUN5312DW1T2 Datasheet - Page 22

• Manufacturer Part Number: MUN5312DW1T2
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of MUN5312DW1T2

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G NPN TRANSISTOR
5
I
C
/I
V
B
R
10
Figure 83. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 81. V
15
, COLLECTOR CURRENT (mA)
−25°C
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 85. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= −25°C
75°C
35
10
I
f = 1 MHz
I
T
C
40
E
A
, COLLECTOR CURRENT (mA)
C
= 0 V
25°C
40
= 25°C
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45
20
50
50
22
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 84. Output Current versus Input Voltage
T
V
A
75°C
1
O
= −25°C
40
= 0.2 V
2
T
Figure 82. DC Current Gain
I
A
C
V
, COLLECTOR CURRENT (mA)
in
= −25°C
25°C
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10