MUN5312DW1T2 ON Semiconductor, MUN5312DW1T2 Datasheet - Page 17

• Manufacturer Part Number: MUN5312DW1T2
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of MUN5312DW1T2

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR
5
I
C
/I
V
B
R
Figure 59. Output Capacitance
10
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 57. V
, COLLECTOR CURRENT (mA)
15
−25°C
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 61. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= −25°C
75°C
35
10
I
f = 1 MHz
I
T
C
E
40
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25°C
25°C
http://onsemi.com
45
20
50
50
17
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 60. Output Current versus Input Voltage
75°C
T
V
1
A
O
T
40
= −25°C
A
= 0.2 V
= −25°C
2
Figure 58. DC Current Gain
I
C
V
25°C
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
25°C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10