SI5475BDC-T1-E3 Vishay, SI5475BDC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5475BDC-T1-E3
• Description: MOSFET Power 12V 6.0A 6.3W
• Manufacturer: Vishay

Specifications of SI5475BDC-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Chip FET
• Continuous Drain Current Id: -5.5A
• On Resistance Rds(on): 31mohm
• Power Dissipation Pd: 2.5W
• Peak Reflow Compatible (260 C): Yes
• Reel Quantity: 3000
• Leaded Process Compatible: Yes
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si5475BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
www.vishay.com
4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
0
SD
= 150 °C
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
0.8
I
D
75
= 250 µA
T
0.01
100
0.1
J
10
25 °C, unless otherwise noted
= 25 °C
1
0.1
1.0
100
Safe Operating Area, Junction-to-Ambient
Limited by R
* V
GS
1.2
125
> minimum V
V
DS
150
1.4
(DS)on
-
Drain-to-Source Voltage (V )
1
Single Pulse
*
T
A
GS
= 25 °C
at which R
DS(on)
10
1 ms
10 ms
100 ms
1 s
10 s
0.10
0.08
0.06
0.04
0.02
0.00
DC
50
40
30
20
10
is specified
0
0.001
0
On-Resistance vs. Gate-to-Source Temperature
Single Pulse Power, Junction-to-Ambient
0.01
T
A
100
= 25 °C
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
S-83054-Rev. D, 29-Dec-08
T
1
A
Document Number: 73381
= 125 °C
3
10
I
D
4
= 5.6 A
100
600
5