SI5475BDC-T1-E3 Vishay, SI5475BDC-T1-E3 Datasheet

MOSFET Power 12V 6.0A 6.3W

SI5475BDC-T1-E3

Manufacturer Part Number
SI5475BDC-T1-E3
Description
MOSFET Power 12V 6.0A 6.3W
Manufacturer
Vishay
Datasheet

Specifications of SI5475BDC-T1-E3

Minimum Operating Temperature
- 55 C
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.7 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Chip FET
Continuous Drain Current Id
-5.5A
On Resistance Rds(on)
31mohm
Power Dissipation Pd
2.5W
Peak Reflow Compatible (260 C)
Yes
Reel Quantity
3000
Leaded Process Compatible
Yes
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5475BDC-T1-E3
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
SI5475BDC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI5475BDC-T1-E3
Quantity:
2 383
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The 1206 ChipFET is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 95 °C/W.
Document Number: 73381
S-83054-Rev. D, 29-Dec-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 12
(V)
0.028 at V
0.054 at V
0.039 at V
D
1206-8 ChipFE T
R
D
DS(on)
Bottom View
GS
GS
D
GS
D
J
(Ω)
= - 4.5 V
= - 1.8 V
= - 2.5V
S
= 150 °C)
D
b, f
D
1
P-Channel 12-V (D-S) MOSFET
G
Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free)
I
D
- 6
- 6
- 6
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
15.5 nC
g
Steady State
(Typ.)
t ≤ 5 s
Si5475BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
T
T
T
T
T
T
Marking Code
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
BN
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
XXX
Part # Code
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
Available
Symbol
R
R
Lot Traceability
and Date Code
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFET: 1.8 V Rated
Typical
40
15
- 55 to 150
G
- 7.7
- 6.2
- 1.3
Limit
2.5
1.6
- 5.2
Maximum
- 12
- 20
260
- 6
- 6
± 8
6.3
P-Channel MOSFET
4
b,c
b,c
a
a
b,c
b,c
b,c
Vishay Siliconix
50
20
Si5475BDC
S
D
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI5475BDC-T1-E3 Summary of contents

Page 1

... Q (Typ.) • Halogen-free According to IEC 61249-2- Available - 6 • TrenchFET - 6 15 Marking Code BN XXX Lot Traceability and Date Code Part # Code Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free) Si5475BDC-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ° ° ° ...

Page 2

... Si5475BDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73381 S-83054-Rev. D, 29-Dec-08 25 °C, unless otherwise noted 1 2.0 2 Si5475BDC Vishay Siliconix 125 ° ° °C 0 0.0 0.4 0.8 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 2100 1800 C iss 1500 1200 900 600 ...

Page 4

... Si5475BDC Vishay Siliconix TYPICAL CHARACTERISTICS 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 25 °C, unless otherwise noted °C J 0.8 1.0 1.2 1 250 µ 100 125 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73381 S-83054-Rev. D, 29-Dec-08 25 °C, unless otherwise noted 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si5475BDC Vishay Siliconix ...

Page 6

... Si5475BDC Vishay Siliconix TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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