SI5475BDC-T1-GE3 Vishay

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SI5475BDC-T1-GE3

Manufacturer Part Number

SI5475BDC-T1-GE3

Description

P-CHANNEL 12-V (D-S) MOSFET

Manufacturer

Vishay

Specifications of SI5475BDC-T1-GE3

Configuration

Single Hex Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.028 Ohms

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

7.7 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

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