SI5475BDC Vishay, SI5475BDC Datasheet

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SI5475BDC

Manufacturer Part Number
SI5475BDC
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5475BDC-T1-E3
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
SI5475BDC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI5475BDC-T1-E3
Quantity:
2 383
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 95 °C/W.
Document Number: 73381
S-80261-Rev. C, 04-Feb-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 12
(V)
0.028 at V
0.054 at V
0.039 at V
D
1206-8 ChipFE T
http://www.vishay.com/ppg?73257
r
D
DS(on)
Bottom View
GS
GS
D
GS
D
J
(Ω)
= - 4.5 V
= - 1.8 V
= - 2.5V
S
= 150 °C)
D
b, f
D
1
P-Channel 12-V (D-S) MOSFET
G
Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free)
I
D
- 6
- 6
- 6
(A)
a
d, e
). The 1206 ChipFET is a leadless package. The end of the lead terminal is exposed copper
A
= 25 °C, unless otherwise noted
Q
15.5 nC
g
Steady State
(Typ.)
New Product
t ≤ 5 s
T
T
T
T
T
T
T
T
T
T
Marking Code
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
BN
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
XXX
Part # Code
FEATURES
• TrenchFET
Symbol
R
R
Lot Traceability
and Date Code
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Power MOSFET: 1.8 V Rated
Typical
40
15
- 55 to 150
G
- 7.7
- 6.2
- 1.3
Limit
2.5
1.6
- 5.2
Maximum
- 12
- 6
- 6
- 20
260
± 8
6.3
P-Channel MOSFET
4
b,c
b,c
a
a
b,c
b,c
b,c
Vishay Siliconix
50
20
Si5475BDC
S
D
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
°C
W
V
A
1

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SI5475BDC Summary of contents

Page 1

... New Product FEATURES • TrenchFET a Q (Typ Marking Code BN XXX Lot Traceability and Date Code Part # Code Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free °C, unless otherwise noted A Symbol ° ° ° ° ° ° ...

Page 2

... Si5475BDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 73381 S-80261-Rev. C, 04-Feb-08 New Product 25 °C, unless otherwise noted 1 2.0 2 Si5475BDC Vishay Siliconix 125 ° ° °C 0 0.0 0.4 0.8 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 2100 1800 C iss ...

Page 4

... Si5475BDC Vishay Siliconix TYPICAL CHARACTERISTICS 150 ° 0.0 0.2 0.4 0.6 Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 25 °C, unless otherwise noted 0.10 0.08 0. °C J 0.04 0.02 0.00 0.8 1.0 1.2 1 250 µ 100 125 150 100 Limited by r ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73381 S-80261-Rev. C, 04-Feb-08 New Product 25 °C, unless otherwise noted 100 125 150 Si5475BDC Vishay Siliconix 100 125 - Case Temperature (° Power Derating www.vishay.com 150 5 ...

Page 6

... Si5475BDC Vishay Siliconix TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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