FDP036N10A Fairchild Semiconductor, FDP036N10A Datasheet - Page 5

• Manufacturer Part Number: FDP036N10A
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP036N10A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 7295pF @ 25V
• Power - Max: 227W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Forward Transconductance Gfs (max / Min): 167 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 176 A
• Power Dissipation: 227 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 89 nC
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 214A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.0032ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP036N10A Rev. A1
Typical Performance Characteristics
0.001
0.01
0.1
3
1
10
0.1
0.05
0.02
Single pulse
0.5
0.2
0.01
-5
Figure 12. Transient Thermal Response Curve
10
-4
Rectangular Pulse Duration [sec]
10
-3
5
10
-2
10
*Notes:
P
-1
1. Z
2. Duty Factor, D = t
3. T
DM
q
JM
JC
(t) = 0.66
- T
C
t
1
= P
t
2
1
DM
o
C/W Max.
* Z
1
q
/t
JC
2
(t)
10
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