FDP036N10A Fairchild Semiconductor, FDP036N10A Datasheet - Page 3

• Manufacturer Part Number: FDP036N10A
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP036N10A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 7295pF @ 25V
• Power - Max: 227W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Forward Transconductance Gfs (max / Min): 167 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 176 A
• Power Dissipation: 227 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 89 nC
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 214A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.0032ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP036N10A Rev. A1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10000
0.0040
0.0035
0.0030
0.0025
5000
600
100
100
10
2
0.02
0.1
0
V
GS
Drain Current and Gate Voltage
=
60
15.0 V
10.0 V
V
V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
DS
DS
0.1
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
120
, Drain Current [A]
V
V
GS
GS
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
= 10V
= 20V
180
C
C
C
iss
oss
rss
*Notes:
1. 250
2. T
1
240
*Note: T
C
= 25
m
(
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
C
300
10
C
= 25
GS
= 0V
o
C
)
360
10
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
300
100
500
100
10
10
10
8
6
4
2
0
1
1
0.2
0
2
V
Variation vs. Source Current
and Temperature
SD
0.4
, Body Diode Forward Voltage [V]
V
Q
3
GS
g
, Total Gate Charge [nC]
150
V
V
V
, Gate-Source Voltage[V]
150
30
DS
DS
DS
o
o
C
= 20V
= 50V
= 80V
C
0.6
4
*Notes:
-55
0.8
1. V
2. 250
25
25
*Notes:
1. V
2. 250
o
C
*Note: I
60
o
o
DS
C
C
GS
m
= 10V
s Pulse Test
m
= 0V
s Pulse Test
5
1.0
D
= 75A
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90
1.2
6