FDP036N10A Fairchild Semiconductor, FDP036N10A Datasheet - Page 4

• Manufacturer Part Number: FDP036N10A
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP036N10A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 7295pF @ 25V
• Power - Max: 227W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Forward Transconductance Gfs (max / Min): 167 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 176 A
• Power Dissipation: 227 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 89 nC
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 214A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.0032ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP036N10A Rev. A1
Typical Performance Characteristics
Figure 11. Unclamped Inductive Switching Capability
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
3000
1000
1.10
1.05
1.00
0.95
0.90
100
100
200
0.1
10
10
-100
1
1
0.01
0.1
Operation in This Area
is Limited by R
STARTING T
*Notes:
1. T
2. T
3. Single Pulse
vs. Temperature
-50
C
J
0.1
t
T
AV
= 175
= 25
V
J
, Junction Temperature
, TIME IN AVALANCHE (ms)
DS
o
1
, Drain-Source Voltage [V]
If R = 0
t
If R = 0
t
J
AV
AV
C
o
C
= 150
0
= (L)
= (L/R)In
DS(on)
(
1
I
AS
o
C
)
[(
/
(
50
1.3*RATED BV
I
AS
*R
100ms
10ms
)
DC
10
/
STARTING T
(
1ms
1.3*RATED BV
10
100
100
DSS
*Notes:
-V
m
[
1. V
2. I
s
o
DD
100
C
)
DSS
D
J
150
GS
]
= 25
= 10mA
-V
100
DD
= 0V
)
+1
o
C
]
1000
200
300
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
200
150
100
2.1
1.8
1.5
1.2
0.9
0.6
50
-100
0
25
-50
50
vs. Temperature
T
T
Limited by package
vs. Case Temperature
J
C
, Junction Temperature
, Case Temperature
75
0
100
50
125
100
[
o
C
*Notes:
[
]
1. V
2. I
o
C
D
150
150
]
GS
= 75A
www.fairchildsemi.com
= 10V
200
175