FDP036N10A Fairchild Semiconductor, FDP036N10A Datasheet - Page 2

• Manufacturer Part Number: FDP036N10A
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP036N10A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 7295pF @ 25V
• Power - Max: 227W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Forward Transconductance Gfs (max / Min): 167 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 176 A
• Power Dissipation: 227 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 89 nC
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 214A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.0032ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP036N10A Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
DBV
I
I
V
R
g
C
C
C
Q
Q
Q
Q
t
t
t
t
ESR
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting T
3. I
4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
DT
FS
GS(th)
DS(on)
iss
oss
rss
SD
g(tot)
gs
gs2
gd
rr
Device Marking
Symbol
DSS
SD
J
FDP036N10A
DSS
£ 75A, di/dt £ 200A/ms, V
J
= 25°C, L = 0.31mH, I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
£ BV
FDP036N10A
AS
= 60A
DSS
Device
Parameter
, Starting T
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
GS
F
= 250mA, V
= 250mA, Referenced to 25
/dt = 100A/ms
= 80V, V
= 80V, T
= ±20V, V
= 0V, I
= 10V, I
= 25V, V
= 80V, I
= 10V
= 50V, I
= 0V, I
= V
= 10V, I
= 10V, R
DS
Test Conditions
, I
SD
2
SD
D
D
Reel Size
D
D
D
C
GS
GS
GEN
GS
= 75A
= 75A
= 75A
= 75A
= 75A
DS
= 250mA
= 75A
= 150
= 0V
= 0V
= 0V, T
-
= 0V
= 4.7W
o
C
C
= 25
o
(Note 4)
o
C
C
Tape Width
-
Min.
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5485
2430
Typ.
0.07
129
210
167
3.0
3.2
1.2
72
89
24
25
22
54
37
11
8
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
7295
3230
1.25
500
315
116
176
704
118
4.0
3.6
54
84
32
50
1
-
-
-
-
-
-
-
-
-
Units
V/
mW
nC
nC
nC
nC
mA
nA
pF
pF
pF
ns
ns
ns
ns
ns
nC
V
V
S
W
A
A
V
o
C