MAX16048ETN+ Maxim Integrated Products, MAX16048ETN+ Datasheet - Page 62

• Manufacturer Part Number: MAX16048ETN+
• Description: IC EE-PROG SYS MGR 8CH 56-TQFN
• Manufacturer: Maxim Integrated Products
• Type: System Managerr

Specifications of MAX16048ETN+

• Number Of Voltages Monitored: 8
• Output: Open Drain, Push-Pull
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: Adjustable/Selectable
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-TQFN
• Manual Reset: Resettable
• Watchdog: Yes
• Supply Voltage (max): 14 V
• Supply Voltage (min): 3 V
• Supply Current (typ): 6500 uA
• Maximum Power Dissipation: 3810 mW
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
Simple slew-rate control is accomplished by adding a
capacitor from the gate to ground. The slew rate is
approximated by the RC charge curve of the pullup
resistor acting with the capacitor from gate to ground.
Note that the power-off is not well controlled due to the
absence of the 100Ω pulldowns.
Ensure that MOSFETs have a low gate-to-source
threshold (V
ommended n-channel MOSFETs.
Table 37. Recommended MOSFETs
62
MANUFACTURER
International
______________________________________________________________________________________
Fairchild
Rectifier
Vishay
GS_TH
) and R
FDC633N
FDP8030L
FDB8030L
FDD6672A
FDS8876
Si7136DP
Si4872DY
SUD50N02-09P
Si1488DH
IRL3716
IRL3402
IRL3715Z
IRLM2502
PART
DS(ON)
. See Table 37 for rec-
MAX V
(V)
30
30
30
30
20
30
20
20
20
20
20
20
DS
V
GS_TH
0.67
0.95
(V)
1.5
1.2
2.5
0.7
2.1
1.2
3
1
3
3
Bypass DBP and ABP each with a 1µF ceramic capacitor
to GND. Bypass V
Avoid routing digital return currents through a sensitive
analog area, such as an analog supply input return path
or ABP’s bypass capacitor ground connection. Use dedi-
cated analog and digital ground planes. Connect the
capacitors as close as possible to the device.
R
V
DS(ON)
GS =
(mΩ)
10.2
15.5
4.5
9.5
4.5
4.8
42
10
17
49
10
45
4.5V
AT
I
MAX
VOLTAGE
DROP
11.11
11.11
CC
1.19
5.26
2.94
2.94
1.02
10.4
3.22
1.11
AT 50mV
(A)
5
5
with a 10µF capacitor to ground.
Layout and Bypassing
Q
(max)
g
(nC)
24.5
10.5
120
11
33
15
27
53
78
(typ)
6
7
8
Super SOT-6
TO-220
TO-263AB
TO-252
SO-8
SO-8
SO-8
TO-252
SOT-363
SC70-6
TO220AB
D
TO-262
TO220AB
TO220AB
D
TO-262
SOT23-3
Micro3
2
2
PAK
PAK
PACKAGE