IRFZ48R Vishay, IRFZ48R Datasheet - Page 6

• Manufacturer Part Number: IRFZ48R
• Description: MOSFET N-CH 60V 50A TO-220AB
• Manufacturer: Vishay

Specifications of IRFZ48R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ48R

IRFZ48R, SiHFZ48R
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
V
Fig. 13a - Basic Gate Charge Waveform
AS
GS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
250
200
150
100
This datasheet is subject to change without notice.
50
0
25
Starting T , Junction Temperature ( C)
+
-
50
V
DD
J
75
100
125
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
150
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
I D
29A
51A
72A
°
GS
Same type as D.U.T.
175
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0518-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91295
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS