IRF5851 International Rectifier, IRF5851 Datasheet

MOSFET N/PCH 20V 2.7A/2.2A 6TSOP

IRF5851

Manufacturer Part Number
IRF5851
Description
MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF5851

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A, 2.2A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
400pF @ 15V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF5851TRPBF
Manufacturer:
NIPPON
Quantity:
30 000
Part Number:
IRF5851TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Thermal Resistance
l
l
l
l
l
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
R
Absolute Maximum Ratings
R
V
I
I
I
P
P
V
D
D
DM
T
DS(on)
θJA
DS
D
D
GS
J,
@ T
@ T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
reduction enables an increase in current-handling capability.
= 25°C
= 70°C
Maximum Junction-to-Ambient ƒ
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
GS
GS
@ 10V
@ 10V
G1
G2
S 2
1
2
3
N-Channel
2.7
2.2
20
11
Typ.
–––
HEXFET
-55 to + 150
6
5
4
Max.
D1
S 1
D2
0.96
0.62
± 12
7.7
R
V
®
DS(on)
DSS
IRF5851
Max.
Power MOSFET
130
P-Channel
-2.2
-1.7
-9.0
0.090Ω 0.135Ω
-20
N-Ch
20V
TSOP-6
PD-93998B
P-Ch
-20V
Units
°C/W
mW/°C
°C
W
09/02/02
V
1

Related parts for IRF5851

IRF5851 Summary of contents

Page 1

... This Dual TSOP-6 package is ideal for applications where printed circuit board space premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and R reduction enables an increase in current-handling capability ...

Page 2

... IRF5851 Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = 15V 0.0 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5851 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V 1.5V 1.50V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 2.7A ...

Page 4

... IRF5851 600 1MHz iss rss gd 500 oss iss 400 300 200 100 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 ° J 0.1 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5851 + - ≤ 1 ≤ 0 d(off Notes thJA A 0 ...

Page 6

... IRF5851 0.14 0.12 0. 2.7A 0.08 0.06 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform 6 N-Channel 0.30 0.20 0.10 0.00 0 6.0 7.0 8.0 Fig 12. Typical On-Resistance Vs. Drain 12V V GS Fig 13b ...

Page 7

... Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com N-Channel 250µ 0.001 75 100 125 150 IRF5851 0.010 0.100 1.000 10.000 Time (sec) Typical Power Vs. Time 7 ...

Page 8

... IRF5851 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V 10 -1.5V BOTTOM -1.2V 1 -1.2V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 16. Typical Output Characteristics 10 ° 20µs PULSE WIDTH 0.1 1.2 1.6 2 Gate-to-Source Voltage (V) GS Fig 18. Typical Transfer Characteristics 8 P-Channel ...

Page 9

... Fig 21. Typical Gate Charge Vs. 100 150 Single Pulse GS 0.1 0.1 1.2 1.4 Fig 23. Maximum Safe Operating Area IRF5851 V =-16V -2. =-10V Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 100us 1ms 10ms ° ° Drain-to-Source Voltage (V) DS ...

Page 10

... IRF5851 2.5 2.0 1.5 1.0 0.5 0 100 Fig 24. Maximum Drain Current Vs. Junction Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 26. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 10 P-Channel Fig 25a. Switching Time Test Circuit ...

Page 11

... Fig 29a. Basic Gate Charge Waveform www.irf.com P-Channel 0.40 0.30 0.20 0.10 6.0 7 Fig 28. Typical On-Resistance Vs. Drain Current Regulator Same Type as D.U.T. .2µF 12V V GS Fig 29b. Gate Charge Test Circuit IRF5851 -2. -4. Drain Current (A) Current 50KΩ .3µ D.U.T. + -3mA I I ...

Page 12

... IRF5851 1.0 0.8 0.6 0.4 -75 -50 - Temperature ( °C ) Fig 30. Threshold Voltage Vs. Temperature 12 P-Channel -250µ 100 125 150 0.001 Fig 31 0.010 0.100 1.000 10.000 Time (sec) Typical Power Vs. Time www.irf.com ...

Page 13

... WAFER LOT NUMBER CODE XXXX BOT T OM PART NUMBER CODE REFERENCE I3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DAT E CODE EXAMPLES : YWW = 9603 = 6C YWW = 9632 = FF Note: This part marking information applies to devices produced after 02/26/2001. PART NUMBER PART NUMBER CODE REFERENCE: ...

Page 14

... IRF5851 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 14 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 09/02 TAC Fax: (310) 252-7903 www ...

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