IRF5851 International Rectifier, IRF5851 Datasheet - Page 9

• Manufacturer Part Number: IRF5851
• Description: MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5851

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2.2A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.1
10
500
400
300
200
100
1
0.4
Fig 22. Typical Source-Drain Diode
0
Fig 20. Typical Capacitance Vs.
1
T = 150 C
J
Drain-to-Source Voltage
-V
C iss
C rss
C oss
-V
SD
0.6
DS
,Source-to-Drain Voltage (V)
Forward Voltage
°
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
T = 25 C
0.8
J
0V,
C
C
C
gs
gd
ds
+ C
+ C
10
°
f = 1MHz
gd ,
gd
1.0
C
ds
V
1.2
SHORTED
GS
= 0 V
P-Channel
1.4
100
100
0.1
10
Fig 23. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
I =
D
Fig 21. Typical Gate Charge Vs.
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
-2.2A
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
2
1
BY R
V
V
DS
DS
4
DS(on)
=-16V
=-10V
IRF5851
10
6
100us
1ms
10ms
100
9
8