IRF5851 International Rectifier, IRF5851 Datasheet - Page 10

• Manufacturer Part Number: IRF5851
• Description: MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5851

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2.2A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5851
10
1000
100
0.1
10
0.00001
Fig 24. Maximum Drain Current Vs.
1
2.5
2.0
1.5
1.0
0.5
0.0
D = 0.50
25
Fig 26. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Junction Temperature
50
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
1
P-Channel
150
0.01
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
d(on)
≤ 0.1 %
J
≤ 1
t
r
DM
x Z
1
thJA
P
2
DM
1
+ T
t
www.irf.com
d(off)
A
t
1
t
t
2
f
+
-
10