SI3210DCQ1-EVB Silicon Laboratories Inc, SI3210DCQ1-EVB Datasheet - Page 11

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SI3210DCQ1-EVB

Manufacturer Part Number
SI3210DCQ1-EVB
Description
DAUGHTERCARD W/SI3201 INTERFACE
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Type
SLIC/CODECr
Datasheets

Specifications of SI3210DCQ1-EVB

Contents
Evaluation Board and CD-ROM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
Si3210
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 4. Linefeed Characteristics
(V
Parameter
Loop Resistance Range
DC Loop Current Accuracy
DC Open Circuit Voltage
Accuracy
DC Differential Output
Resistance
DC Open Circuit Voltage—
Ground Start
DC Output Resistance—
Ground Start
DC Output Resistance—
Ground Start
Loop Closure/Ring Ground
Detect Threshold Accuracy
Ring Trip Threshold
Accuracy
Ring Trip Response Time
Ring Amplitude
Ring DC Offset
Trapezoidal Ring Crest
Factor Accuracy
Sinusoidal Ring Crest
Factor
Ringing Frequency Accuracy
Ringing Cadence Accuracy
Calibration Time
Power Alarm Threshold
Accuracy
Note:
DDA
, V
DC resistance round trip; 160 Ω corresponds to 2 kft 26 gauge AWG
DDD
= 3.13 to 5.25 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Symbol
R
V
R
R
R
R
V
R
OCTO
ROTO
LOOP
TOTO
DO
OS
TR
CF
User Programmable Register 70
At Power Threshold = 300 mW
R
I
I
Accuracy of ON/OFF Times
RING
I
LOOP
LIM
RING
Active Mode; V
Programmable in Indirect
and Indirect Register 36
5 REN load; sine wave;
= 29 mA, ETBA = 4 mA
<I
↑CAL to ↓CAL Bit
Crest factor = 1.3
<I
I
I
Test Condition
THR
THR
= 160 Ω, V
LIM
TIP to ground
V
LIM
Rev. 1.42
I
V
Register 19
LOOP
TIP
See note.
f = 20 Hz
; V
OC
; RING to ground
= 11.43 mA
= 40.64 mA
– V
RING
= 48 V
< I
RING
OC
LIM
BAT
wrt ground
= 48 V,
= –75 V
.
–.05
1.35
Min
–10
150
–20
–10
–50
–25
–4
–4
44
–1
0
0
Si3210/Si3211
Typ
160
160
Max
1.45
160
600
.05
10
20
10
50
25
1
4
4
Unit
V
kΩ
ms
ms
%
%
%
%
%
V
V
rms
V
11

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