DSP56F801EVM Freescale Semiconductor, DSP56F801EVM Datasheet - Page 21

KIT EVALUATION FOR DSP56F801

DSP56F801EVM

Manufacturer Part Number
DSP56F801EVM
Description
KIT EVALUATION FOR DSP56F801
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of DSP56F801EVM

Processor To Be Evaluated
56F801
Data Bus Width
16 bit
Interface Type
RS-232
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Freescale Semiconductor
Program time
Erase time
Mass erase time
Endurance
Data Retention
PROG/ERASE to NVSTR set
up time
NVSTR hold time
NVSTR hold time (mass erase)
NVSTR to program set up time
Recovery time
Cumulative program
HV period
Program hold time
Address/data set up time
Address/data hold time
1. One cycle is equal to an erase program and read.
2. Thv is the cumulative high voltage programming time to the same row before next erase. The same address cannot be
programmed twice before next erase.
3. Parameters are guaranteed by design in smart programming mode and must be one cycle or greater.
*The Flash interface unit provides registers for the control of these parameters.
Operating Conditions:
Characteristic
2
1
The following parameters should only be used in the Manual Word Programming Mode
1
3
3
3
Table 3-7 Flash Timing Parameters
V
Symbol
T
T
T
T
T
T
T
E
D
T
SS
T
T
T
erase*
T
nvh1*
prog*
CYC
nvs*
nvh*
pgs*
me*
RET
rcv*
pgh
adh
ads
hv
= V
56F801 Technical Data, Rev. 17
SSA
= 0 V, V
10,000
Min
100
20
20
10
DD
= V
DDA
20,000
Typ
100
30
10
5
5
1
3
= 3.0–3.6V, T
Max
A
= –40° to +85°C, C
cycles
years
Unit
ms
ms
ms
us
us
us
us
us
us
Flash Memory Characteristics
L
Figure
Figure
Figure
Figure
Figure
Figure 3-4
Figure 3-5
Figure 3-6
Figure 3-6
Figure 3-5
Figure 3-6
Figure 3-4
Figure 3-6
Figure 3-4
Figure 3-4
Figure 3-4
Figure 3-4
Figure
50pF
3-4,
3-5,
3-4,
3-4,
3-5,
21

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