MPC8536DS Freescale Semiconductor, MPC8536DS Datasheet - Page 111

BOARD DEV SYSTEM MPC8536E

MPC8536DS

Manufacturer Part Number
MPC8536DS
Description
BOARD DEV SYSTEM MPC8536E
Manufacturer
Freescale Semiconductor
Series
PowerQUICC III™r
Type
MPUr
Datasheets

Specifications of MPC8536DS

Contents
Board, Software and Documentation
Processor Series
MPC85xx
Core
e500
Data Bus Width
32 bit
Maximum Clock Frequency
667 MHz
Operating Supply Voltage
- 0.3 V to + 1.21 V
Maximum Operating Temperature
+ 105 C
Data Ram Size
32 KB
Interface Type
SPI, USB
Program Memory Type
DDR2, DDR3, SDRAM
Core Size
32 Bit
Program Memory Size
544KB
Cpu Speed
1.5GHz
Digital Ic Case Style
BGA
No. Of Pins
783
Supply Voltage Range
0.95V To 1.05V
Rohs Compliant
Yes
For Use With/related Products
MPC8536
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2.24.1
Table 79
Simulations with heat sinks were done with the package mounted on the 2s2p thermal test board. The thermal interface material
was a typical thermal grease such as Dow Corning 340 or Wakefield 120 grease.For system thermal modeling, the MPC8536E
thermal model without a lid is shown in
conductivity of 19.8 W/m•K and a through-plane conductivity of 1.13 W/m•K. The solder balls and air are modeled as a single
block 29 x 29 x 0.5 mm with an in-plane conductivity of 0.034 W/m•K and a through plane conductivity of 12.1 W/m•K. The
die is modeled as 9.6 x 9.57 mm with a thickness of 0.75 mm. The bump/underfill layer is modeled as a collapsed thermal
resistance between the die and substrate assuming a conductivity of 7.5 W/m•K in the thickness dimension of 0.07 mm. The die
is centered on the substrate. The thermal model uses approximate dimensions to reduce grid. Please refer to the case outline for
actual dimensions.
2.24.2
Freescale Semiconductor
Junction-to-ambient Natural Convection
Junction-to-ambient Natural Convection
Junction-to-ambient (@200 ft/min)
Junction-to-ambient (@200 ft/min)
Junction-to-board thermal
Junction-to-case thermal
Notes
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
2. Per JEDEC JESD51-2 and JESD51-6 with the board (JESD51-9) horizontal.
3. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured
4. Thermal resistance between the active surface of the die and the case top surface determined by the cold plate method
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
on the top surface of the board near the package.
(MIL SPEC-883 Method 1012.1) with the calculated case temperature. Actual thermal resistance is less than 0.1 •C/W
provides the package thermal characteristics.
Thermal Characteristics
Recommended Thermal Model
MPC8536E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 3
Characteristic
Conductivity
Bump/Underfill (9.6 x 9.6 × 0.07 mm) Collapsed Thermal Resistance
Silicon
Kz
Kx
Ky
Kz
Table 79. Package Thermal Characteristics
Figure 72
Table 80. MPC8536E Thermal Model
Temperature dependent
Substrate (29 × 29 × 1.2 mm)
The substrate is modeled as a block 29 x 29 x 1.2 mm with an in-plane
Die (9.6x9.6 × 0.85 mm)
Value
19.8
19.8
1.13
7.5
Four layer board (2s2p)
Four layer board (2s2p)
Single layer board (1s)
Single layer board (1s)
JEDEC Board
Symbol
W/m•K
W/m•K
Units
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJB
θJC
Value
< 0.1
23
18
18
14
10
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
Notes
C/W
Thermal
1, 2
1, 2
1, 2
1, 2
3
4
111

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