MPC8360E-RDK Freescale Semiconductor, MPC8360E-RDK Datasheet - Page 14

BOARD REFERENCE DESIGN FOR MPC

MPC8360E-RDK

Manufacturer Part Number
MPC8360E-RDK
Description
BOARD REFERENCE DESIGN FOR MPC
Manufacturer
Freescale Semiconductor
Series
PowerQUICC II™ PROr
Type
MPUr
Datasheets

Specifications of MPC8360E-RDK

Contents
Board, Cables, CD, Power Supply
Processor To Be Evaluated
MPC8360E
Data Bus Width
32 bit
Interface Type
RS-232, Ethernet, USB
Operating Supply Voltage
1.3 V
For Use With/related Products
MPC8360E
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Characteristics
14
Notes:
1. The values do not include I/O supply power (OV
2. Typical power is based on a voltage of V
3. Thermal solutions will likely need to design to a value higher than typical power on the end application, T
4. Maximum power is based on a voltage of V
5. Maximum power is based on a voltage of V
6. Typical power is based on a voltage of V
7. Maximum power is based on a voltage of V
8. This frequency combination is only available for rev. 2.0 silicon.
9. This frequency combination is not available for rev. 2.0 silicon.
Notes:
1. The values do not include I/O supply power (OV
2. Typical power is based on a voltage of V
3. Thermal solutions will likely need to design to a value higher than typical power on the end application, T
4. Maximum power is based on a voltage of V
application.
power.
a junction T
application.
a junction T
application.
power.
MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 4
Frequency (MHz)
Frequency (MHz)
Core
Core
667
266
400
J
J
= 105°C, and an artificial smoke test.
= 70°C, and an artificial smoke test.
Table 4. MPC8360E TBGA Core Power Dissipation
Frequency (MHz)
Frequency (MHz)
Table 5. MPC8358E TBGA Core Power Dissipation
CSB
CSB
333
266
266
DD
DD
DD
= 1.2 V or 1.3 V, a junction temperature of T
DD
DD
DD
DD
= 1.3 V, a junction temperature of T
= 1.2 V, a junction temperature of T
= 1.3 V for applications that use 667 MHz (CPU) or 500 (QE) with WC process,
= 1.3 V for applications that use 667 MHz (CPU)/500 (QE) with WC process,
= 1.2 V, WC process, a junction T
= 1.2 V, WC process, a junction T
DD
DD
, LV
, LV
Frequency (MHz)
Frequency (MHz)
QUICC Engine
QUICC Engine
DD
DD
, GV
, GV
500
300
400
DD
DD
) or AV
) or AV
DD
DD
. For I/O power values, see
. For I/O power values, see
Typical
Typical
6.1
4.1
4.5
J
J
J
J
= 70°C, and a Dhrystone benchmark
= 105°C, and a Dhrystone benchmark
= 105°C, and an artificial smoke test.
= 105°C, and an artificial smoke test.
1
(continued)
J
= 105°C, and a Dhrystone benchmark
1
Maximum
Maximum
6.8
4.5
5.0
Freescale Semiconductor
Table
Table
A
A
Unit
Unit
target, and I/O
target, and I/O
W
W
W
6.
6.
2, 3, 5, 9
Notes
Notes
2, 3, 4
2, 3, 4

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