DEMO9S08DZ60 Freescale Semiconductor, DEMO9S08DZ60 Datasheet - Page 372

BOARD DEMO

DEMO9S08DZ60

Manufacturer Part Number
DEMO9S08DZ60
Description
BOARD DEMO
Manufacturer
Freescale Semiconductor
Type
MCUr

Specifications of DEMO9S08DZ60

Contents
Board, Cable, CD
Processor To Be Evaluated
MC9S08DZ60
Interface Type
RS-232, USB
Silicon Manufacturer
Freescale
Core Architecture
HCS08
Core Sub-architecture
HCS08
Silicon Core Number
MC9S08
Silicon Family Name
S08D
Kit Contents
MC9S08DZ60 Board, Software, Cables, Connectors
Rohs Compliant
Yes
For Use With/related Products
MC9S08DZ60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Appendix A Electrical Characteristics
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving equations 1 and 2 iteratively for any value of T
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
372
D
(at equilibrium) for a known T
Num
Human Body
Latch-up
1
2
3
ESD Protection and Latch-Up Immunity
Model
Human Body Model (HBM)
Charge Device Model (CDM)
Latch-up Current at T
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table A-5. ESD and Latch-Up Protection Characteristics
Table A-4. ESD and Latch-up Test Conditions
A
= 125°C
Rating
A
. Using this value of K, the values of P
MC9S08DZ60 Series Data Sheet, Rev. 4
Description
A
.
Symbol
V
V
I
HBM
CDM
LAT
Symbol
+/- 2000
+/- 500
+/- 100
R1
C
Min
D
and T
J
Value
1500
–2.5
100
can be obtained by
7.5
Max
3
Freescale Semiconductor
Unit
pF
Ω
Unit
mA
V
V
V
V

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