LM3528TMEV National Semiconductor, LM3528TMEV Datasheet - Page 4

• Manufacturer Part Number: LM3528TMEV
• Description: BOARD EVAL FOR LM3528 12MCRSMD
• Manufacturer: National Semiconductor

Specifications of LM3528TMEV

• Current - Output / Channel: 20mA
• Outputs And Type: 2, Non-Isolated
• Voltage - Output: 21V
• Features: Dimmable, I²C Interface
• Voltage - Input: 2.5 ~ 5.5V
• Utilized Ic / Part: LM3528
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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I
I
HWEN/PGEN/GPIO, GPIO1 Pin Voltage Specifications
V
V
V
I
V
V
V
V
I
t
t
t
t
t
4
Q
SHDN
2
2
1
2
3
5
IL
IH
OL
C Compatible Voltage Specifications (SCL, SDA, VIO)
IO
IL
IH
OL
C Compatible Timing Specifications (SCL, SDA, VIO, see Figure 1) (Notes 8, 9)
Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended
to be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: All voltages are with respect to the potential at the GND pin.
Note 3: For detailed soldering specifications and information, please refer to National Semiconductor Application Note 1112: Micro SMD Wafer LEvel Chip Scale
Package (AN-1112).
Note 4: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
T
Note 5: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
derated. Maximum ambient temperature (T
dissipation of the device in the application (P
following equation: T
Note 6: Junction-to-ambient thermal resistance (θ
JEDEC standard JESD51-7. The test board is a 4-layer FR-4 board measuring 114.3mm x 76.2mm x 1.6mm. The ground plane on the board is 113mm x 75mm.
Thickness of copper layers are 71.5µm/35µm/35µm/71.5µm (2oz/1oz/1oz/2oz). Ambient temperature in simulation is 22°C, still air. Power dissipation is 1W. For
more information on these topics, please refer to National Semiconductor Application Note 1112, and JEDEC Standard JESD51-7.
Note 7: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical (Typ) numbers are not guaranteed, but represent the most likely norm.
Note 8: SCL and SDA must be glitch-free in order for proper brightness control to be realized.
Note 9: SCL and SDA signals are referenced to VIO and GND for minimum VIO voltage testing. VIO limits indicate the minimum voltage at VIO at which the part
is operational.
Note 10: The human body model is a 100pF capacitor discharged through 1.5kΩ resistor into each pin. (MIL-STD-883 3015.7).
Note 11: The matching specification between MAIN and SUB is calculated as 100 × ((I
100 × (I
J
=+140°C (typ.).
Symbol
MAIN
- I
SUB
)/(I
Quiescent Current, Device
Not Switching
Shutdown Current
Input Logic Low
Input Logic High
Output Logic Low
Serial Bus Voltage Level
Input Logic Low
Input Logic High
Output Logic Low
SCL Clock Period
Data In Setup Time to SCL
High
Data Out Stable After SCL
Low
SDA Low Setup Time to
SCL Low (Start)
SDA High Hold Time After
SCL High (Stop)
MAIN
A-MAX
+ I
= T
SUB
J-MAX-OP
Parameter
).
– (θ
JA
A-MAX
× P
D-MAX
D-MAX
) is dependent on the maximum operating junction temperature (TJ-MAX-OP = +105°C), the maximum power
), and the junction-to ambient thermal resistance of the part/package in the application (θ
JA
) is taken from a thermal modeling result, performed under the conditions and guidelines set forth in the
).
V
V
BSUB = BMAIN = 0x00, 2.5V
< V
V
OLED=’1’, ENM=ENS=’0’,
R
2.5V < V
ENM = ENS = OLED = '0',
2.5V < V
2.5V < V
= 0
2.5V < V
= 0
I
2.5V < V
2.5V < V
2.5V < V
I
LOAD
LOAD
MAIN
REG_CS
SUB/FB
SET
IN
=3mA, MODE bit = 1
Open,
< 5.5V
= 3mA
and V
> V
,
Conditions
IN
IN
IN
IN
IN
IN
IN
< 5.5V
< 5.5V
<5.5V, MODE bit
< 5.5V, MODE bit
< 5.5V (Note 9)
< 5.5V
< 5.5V
REG_OLED
SUB/FB
4
>
,
MAIN
or I
SUB
0.7×V
) - I
Min
100
100
100
1.1
1.7
2.5
0
AVE
IO
) / I
AVE
. This simplifies out to be
Typ
350
250
1.8
J
=+150°C (typ.) and disengages at
0.36×V
Max
390
260
400
400
0.5
V
3
IN
JA
IO
), as given by the
Units
mV
mV
µA
µA
µs
ns
ns
ns
ns
V
V
V
V
V