F5E1 Fairchild Optoelectronics Group, F5E1 Datasheet

DIODE IR EMITTING ALGAAS TO-46

F5E1

Manufacturer Part Number
F5E1
Description
DIODE IR EMITTING ALGAAS TO-46
Manufacturer
Fairchild Optoelectronics Group
Series
F5Er
Datasheet

Specifications of F5E1

Current - Dc Forward (if)
100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.3V
Viewing Angle
80°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-
Other names
F5E1GE
F5E1QT
F5E1QT
DS300287
PARAMETER
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power F5E1
Total Power F5E2
Total Power F5E3
Rise Time 0-90% of output
Fall Time 100-10% of output
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL / OPTICAL CHARACTERISTICS
2001 Fairchild Semiconductor Corporation
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Continuous Forward Current
Forward Current (pw, 10µs; 100Hz)
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (T
Power Dissipation (T
unless otherwise specified.
0.040 (1.02)
0.040 (1.02)
4/25/01
0.030 (0.76)
1.00 (25.4)
PACKAGE DIMENSIONS
NOM
0.184 (4.67)
MIN
(7)
(7)
(7)
Parameter
A
C
= 25°C)
= 25°C)
45°
0.209 (5.31)
1
(3,4,5 and 6)
(3,4 and 6)
(1)
(2)
3
TEST CONDITIONS
0.100 (2.54)
0.050 (1.27)
I
I
I
I
I
F
F
F
F
F
0.155 (3.94)
V
Ø0.020 (0.51) 2X
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
R
MAX
ANODE
(CASE)
= 3 V
(T
A
= 25°C unless otherwise specified)
AlGaAs INFRARED EMITTING DIODE
Symbol
T
T
1 OF 3
T
T
SYMBOL
SOL-F
SOL-I
V
P
P
OPR
STG
I
I
I
F
F
F
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
• Hermetically sealed package
• High irradiance level
R
D
D
(T
DESCRIPTION
The F5E series are 880nm LEDs in a
wide angle, TO-46 package.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
5. Soldering iron tip
6. As long as leads are not under any stress or spring tension
7. Total power output, P
"
P
P
P
V
#
I
t
t
to the TO-18 series phototransistor
PE
R
r
f
F
O
O
O
A
agents.
a solid angle of 2 ! steradians.
=25°C) (All measurements made under pulse conditions)
12.0
10.5
MIN
9.0
260 for 10 sec
1/16”
240 for 5 sec
-65 to +125
-65 to +150
O
Rating
(1.6mm) minimum from housing.
, is the total power radiated by the device into
100
170
1.3
10
3
3
TYP
880
±40
1.5
1.5
MAX
1.7
10
F5E1/2/3
www.fairchildsemi.com
(Connected
CATHODE
SCHEMATIC
To Case)
ANODE
Unit
mW
mA
°C
°C
°C
°C
W
A
A
V
UNITS
Deg.
mW
mW
mW
nm
µA
µs
µs
V
3
1

Related parts for F5E1

F5E1 Summary of contents

Page 1

... C ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power F5E1 (7) Total Power F5E2 (7) Total Power F5E3 (7) Rise Time 0-90% of output Fall Time 100-10% of output 2001 Fairchild Semiconductor Corporation DS300287 ...

Page 2

... DISPLACEMENT FROM OPTICAL AXIS (DEGREES) www.fairchildsemi.com AlGaAs INFRARED EMITTING DIODE Figure 1. Power Output vs. Input Current NORMALIZED TO PULSED INPUTS INPUT CURRENT (mA 100 125 150 -25 F5E 100 F5E1/2 100 sec 100 1000 Figure 3. Forward Voltage vs. Temperature 0.5 A 100 100 T , AMBIENT TEMPERATURE ( C) A Figure 5. Output vs. Wavelength ...

Page 3

... DS300287 4/25/01 AlGaAs INFRARED EMITTING DIODE 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness F5E1/2/3 www.fairchildsemi.com ...

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