MT9HTF6472FY-53EB4E3 Micron Technology Inc, MT9HTF6472FY-53EB4E3 Datasheet - Page 10

• Manufacturer Part Number: MT9HTF6472FY-53EB4E3
• Description: MODULE DDR2 512MB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472FY-53EB4E3

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 533MT/s
• Package / Case: 240-FBDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11:
Table 12:
Table 13:
Table 14:
Table 15:
Table 16:
PDF: 09005aef81a2f1eb/Source: 09005aef81a2f20c
HTF9C64_128x72F.fm - Rev. B 9/07 EN
I
I
Total power
I
I
Total power
I
I
Total power
I
I
Total power
I
I
Total power
I
I
Total power
CC
DD
CC
DD
CC
DD
CC
DD
CC
DD
CC
DD
Symbol
Symbol
Symbol
Symbol
Symbol
Symbol
1
1
1
1
1
1
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
Specifications – 512MB DDR2-533
Specifications – 512MB DDR2-667
Specifications – 512MB DDR2-800
Specifications – 1GB DDR2-533
Specifications – 1GB DDR2-667
Specifications – 1GB DDR2-800
I
I
I
I
I
I
Notes:
DD
DD
DD
DD
DD
DD
2,200
1,060
2,200
1,060
2,600
1,105
2,600
1,060
_Idle_0
_Idle_0
_Idle_0
_Idle_0
_Idle_0
_Idle_0
TBD
TBD
TBD
TBD
TBD
TBD
5.5
5.5
6.2
6.1
1. Total power is based on maximum voltage levels, I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
3,000
1,060
3,000
1,060
3,400
1,105
3,400
1,060
_Idle_1 I
_Idle_1 I
_Idle_1 I
_Idle_1 I
_Idle_1 I
_Idle_1 I
TBD
TBD
TBD
TBD
TBD
TBD
6.7
6.7
7.5
7.4
DD
DD
DD
DD
DD
DD
_Active_1 I
_Active_1 I
512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
_Active_1 I
_Active_1 I
_Active_1 I
_Active_1 I
3,400
2,185
3,400
2,065
3,900
2,372
3,900
2,155
14.6
10.2
TBD
TBD
TBD
TBD
TBD
TBD
9.5
9.3
10
DD
DD
DD
DD
DD
DD
_Active_2 I
_Active_2 I
_Active_2 I
_Active_2 I
_Active_2 I
_Active_2 I
3,200
1,060
3,200
1,060
3,700
1,105
3,700
1,060
TBD
TBD
TBD
TBD
TBD
TBD
7.1
7.1
7.9
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DD
DD
DD
DD
DD
DD
DD
_Training
_Training
_Training
_Training
_Training
_Training
Conditions and Specifications
3,500
1,060
4,000
1,105
3,500
1,060
4,000
1,060
CC
TBD
TBD
TBD
TBD
TBD
TBD
7.5
8.4
7.5
8.3
@ 1.575V and I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
©2005 Micron Technology, Inc. All rights reserved.
3,800
1,060
3,800
1,060
4,500
1,105
4,500
1,060
TBD
TBD
TBD
TBD
TBD
TBD
_IBIST
_IBIST
8.0
8.0
_IBIST
9.2
_IBIST
_IBIST
9.1
_IBIST
DD
@ 1.9V.
I
I
I
I
I
I
2,000
2,000
DD
DD
2,500
2,500
DD
DD
DD
DD
263
263
TBD
TBD
TBD
TBD
TBD
TBD
3.6
263
3.6
263
4.4
4.4
_EI
_EI
_EI
_EI
_EI
_EI
Units
Units
Units
Units
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
W
W
W
W
W
W