MT9HTF6472FY-53EB4E3 Micron Technology Inc, MT9HTF6472FY-53EB4E3 Datasheet

no-image

MT9HTF6472FY-53EB4E3

Manufacturer Part Number
MT9HTF6472FY-53EB4E3
Description
MODULE DDR2 512MB 240FBDIMM
Manufacturer
Micron Technology Inc

Specifications of MT9HTF6472FY-53EB4E3

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
533MT/s
Package / Case
240-FBDIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240FBDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Package Type
FBDIMM
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 95C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM FBDIMM
MT9HTF6472F – 512MB
MT9HTF12872F – 1GB
Features
• 240-pin, DDR2 fully buffered DIMM (FBDIMM)
• Fast data transfer rates: PC2-4200, PC2-5300, or
• 512MB (64 Meg x 72), 1GB (128 Meg x 72)
• 3.2 Gb/s, 4.0 Gb/s, and 4.8 Gb/s link transfer rates
• High-speed, 1.5V differential, point-to-point link be-
• Fault-tolerant; can work around a bad bit lane in
• High-density scaling with up to eight FBDIMM devi-
• SMBus interface to AMB for configuration register
• In-band and out-of-band command access
• Deterministic protocol
• Automatic DDR2 SDRAM bus and channel calibra-
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DRAM test support
• V
• V
• V
• V
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
• Supports 95°C operation with 2X refresh
PDF: 09005aef81a2f1eb
htf9c64_128x72fy.pdf - Rev. C 12/09 EN
PC2-6400
tween host memory controller and the advanced
memory buffer (AMB)
each direction
ces per channel
access
– Enables memory controller to optimize DRAM ac-
– Delivers precise control and repeatable memory
tion
tion
DD
REF
CC
DDSPD
cesses for maximum performance
behavior
= 1.5V for AMB
= V
= 0.9V SDRAM command and address termina-
DDQ
= 3–3.6V for AMB and EEPROM
= 1.8V for DRAM
Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
1
Figure 1: 240-Pin FBDIMM (MO-256 R/C A)
Module height: 30.35mm (1.19in)
Options
• Package
• Frequency/CAS latency
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
Note:
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Not recommended for new designs.
© 2005 Micron Technology, Inc. All rights reserved.
1
Marking
Features
-80E
-667
-53E
Y

Related parts for MT9HTF6472FY-53EB4E3

MT9HTF6472FY-53EB4E3 Summary of contents

Page 1

DDR2 SDRAM FBDIMM MT9HTF6472F – 512MB MT9HTF12872F – 1GB Features • 240-pin, DDR2 fully buffered DIMM (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 Meg x 72), 1GB (128 Meg x 72) • 3.2 Gb/s, ...

Page 2

... Table 3: Part Numbers and Timing Parameters – 512MB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module 2 Part Number Density MT9HTF6472FY-80E__ 512MB MT9HTF6472FY-667__ 512MB MT9HTF6472FY-53E__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module 2 Part Number Density MT9HTF12872FY-80E__ 1GB ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin FBDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol PN3 PN3 ...

Page 4

Table 6: Pin Descriptions Symbol Type Description PS[9:0] Input Primary southbound data, positive lines. PS#[9:0] Input Primary southbound data, negative lines. SCK Input System clock input, positive line. SCK# Input System clock input, negative line. SCL Input Serial presence-detect (SPD) ...

Page 5

... System Block Diagram Commodity DDR2 DDR2 SDRAM component devices DDR2 component DDR2 component DDR2 component modules AMB • • • DDR2 component DDR2 component DDR2 component DDR2 component SMBus access to buffer registers Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 6

Functional Block Diagram Figure 3: Functional Block Diagram CS0# DQS0 DQS0# DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1# DM5 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2# DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 ...

Page 7

FBDIMM Design Specification – pending JEDEC approval • FBDIMM: Architecture and Protocol – JESD206 • FBDIMM: Advanced Memory Buffer (AMB) – JESD82-20 • Design for Test, Design for Validation (DFx) Specification • Serial Presence-Detect (SPD) for Fully Buffered DIMM ...

Page 8

See applicable DDR2 SDRAM component data sheet for Table 8: Input DC Voltage and Operating Conditions Parameter AMB supply voltage DDR2 SDRAM supply voltage Termination voltage EEPROM supply voltage SPD input high (logic 1) voltage SPD input low (logic ...

Page 9

Table 10: I Conditions (Continued) DD Symbol Condition I Active power, data pass through: L0 state; 50% DRAM bandwidth to downstream DD_ACTIVE_2 DIMM; 67% READ; 33% WRITE; Primary and secondary channels enabled; DDR2 SDRAM clock active; CKE HIGH; Command and ...

Page 10

Table 15: I Specifications – 1GB DDR2-667 DD Symbol I DD_IDLE_0 I 2600 CC I 1060 DD Total power 6.1 Table 16: I Specifications – 1GB DDR2-800 DD Symbol I DD_IDLE_0 I TBD CC I TBD DD Total power TBD ...

Page 11

Table 18: Serial Presence-Detect EEPROM AC Operating Conditions (Continued) Parameter/Condition SDA and SCL rise time SCL clock frequency Data-in setup time Start condition setup time Stop condition setup time WRITE cycle time 1. To avoid spurious start and stop conditions, ...

Page 12

Module Dimensions Figure 4: 240-Pin DDR2 FBDIMM 66.68 (2.63) TYP 0.5 (0.02) R (4X) 1.5 (0.059 (4X) 2.6 (0.102) D (2X) 5.2 (0.205) TYP 1.25 (0.0492) Pin 1 TYP 1.0 (0.039) TYP 9.9 (0.39) TYP 5.48 (0.216) (x4) ...

Related keywords