MT4VDDT864AG-265B1 Micron Technology Inc, MT4VDDT864AG-265B1 Datasheet - Page 16

• Manufacturer Part Number: MT4VDDT864AG-265B1
• Description: MODULE SDRAM DDR 64MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT864AG-265B1

• Memory Type: DDR SDRAM
• Memory Size: 64MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15: Capacitance
Note: 11; notes appear on pages 18–21
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended
Notes: 1–5, 13-15, 29, 48; notes appear on pages 18–21; 0°C to +70°C; V
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group,
per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup
time
DQS falling edge from CK rising -
hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew
rate)
Address and control input setup time (fast slew
rate)
Address and control input hold time (slow slew
rate)
Address and control input setup time (slow slew
rate)
Address and Control input pulse width (for
each input)
Input/Output Capacitance: DQ, DQS/DM
Input Capacitance: Command and Address: S#, CKE
Input Capacitance: CK0, CK0#
Input Capacitance: CK1, CK1#; CK2, CK2#
AC Operating Conditions
PARAMETER
CL = 2.5
CL = 2
SYMBOL
t
t
CK (2.5)
t
t
t
t
DQSCK
t
t
CK (2)
DQSQ
DQSH
DIPW
t
DQSL
DQSS
t
t
t
t
t
DSH
t
t
t
t
t
IPW
t
DSS
t
t
t
DH
AC
CH
DS
HP
HZ
IH
IH
CL
IS
IS
LZ
F
S
F
S
-0.60
-0.70
16
MIN
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
0.80
0.80
-0.7
7.5
0.2
0.2
2.2
6
t
CH,
-335
64MB, 128MB, 256MB (x64, SR)
t
CL
+0.60
+0.70
MAX
+0.7
0.55
0.55
0.45
1.25
13
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
184-PIN DDR SDRAM UDIMM
= V
7.5/10
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
DD
7.5
0.5
0.5
0.2
0.2
2.2
SYMBOL
1
1
Q = +2.5V ±0.2V
t
CH,
-262
C
C
C
C
IO
I 1
I 2
I 2
t
CL
+0.75
+0.75
+0.75
MAX
0.55
0.55
1.25
0.5
13
13
7.5/10
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
7.5
0.5
0.5
0.2
0.2
.90
.90
2.2
-26A/-265
1
1
MIN
t
10.0
CH,
4.0
8.0
–
t
CL
+0.75
+0.75
+0.75
MAX
0.55
0.55
1.25
0.5
13
13
MAX
12.0
12.0
5.0
9.0
©2004 Micron Technology, Inc.
UNITS NOTES
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
UNITS
pF
pF
pF
pF
41, 46
41, 46
23, 27
23, 27
22, 23
16, 37
16, 37
26
26
27
31
12
12
12
12