MT18VDDF12872HY-335D1 Micron Technology Inc, MT18VDDF12872HY-335D1 Datasheet - Page 23
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MT18VDDF12872HY-335D1
Manufacturer Part Number
MT18VDDF12872HY-335D1
Description
MODULE SDRAM DDR 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872HY-335D1.pdf
(27 pages)
Specifications of MT18VDDF12872HY-335D1
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.53A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 16: EEPROM Device Select Code
Most significant bit (b7) is sent first.
Table 17: EEPROM Operating Modes
09005aef80e487d7
DDF18C64_128x72HG_A.fm - Rev. A 10/03 EN
SELECT CODE
MODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
t SU:STA
Figure 14: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
DEVICE TYPE IDENTIFIER
b7
t HD:DAT
1
0
BYTES
£ 16
23
³ 1
1
1
1
1
b6
0
1
t DH
INITIAL SEQUENCE
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
512MB, 1GB (x72, ECC, DR)
t SU:DAT
b4
0
0
200-PIN DDR SODIMM
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
SA0
SA0
b1
t BUF
©2003 Micron Technology, Inc.
UNDEFINED
RW
RW
RW
B0