MT18VDDF12872HY-335D1 Micron Technology Inc, MT18VDDF12872HY-335D1 Datasheet - Page 16
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MT18VDDF12872HY-335D1
Manufacturer Part Number
MT18VDDF12872HY-335D1
Description
MODULE SDRAM DDR 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872HY-335D1.pdf
(27 pages)
Specifications of MT18VDDF12872HY-335D1
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.53A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 17–20; 0°C £ T
09005aef80e487d7
DDF18C64_128x72HG_A.fm - Rev. A 10/03 EN
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (slow
slew rate)
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle
time
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH
command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
t
t
XSNR
XSRD
t
RPRE
MRD
RPST
t
WTR
REFC
t
QHS
RCD
RRD
REFI
VTD
IPW
RAS
RAP
t
t
t
RFC
NA
WR
QH
RC
RP
IS
S
t
t
0.25
QHS
HP -
200
0.8
2.2
0.9
0.4
0.4
12
42
18
60
72
18
18
12
15
75
t
0
1
0
QH -
16
-335
t
DQSQ
A
70,000
MAX
0.50
70.3
£ +65°C; V
1.1
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
MIN
0.25
HP -
QHS
200
2.2
0.9
0.4
0.4
512MB, 1GB (x72, ECC, DR)
15
40
15
60
75
15
15
15
15
75
DD
t
1
0
1
0
QH -
= V
-262
t
DQSQ
120,000
DD
MAX
200-PIN DDR SODIMM
0.75
70.3
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
t
t
MIN MAX
0.25
t
QHS
200
HP -
1.1
2.2
0.9
0.4
0.4
QH -
16
40 120,000
20
70
80
20
20
15
15
80
0
1
0
-202
t
DQSQ
70.3
1.1
0.6
0.6
7.8
1
UNITS
©2003 Micron Technology, Inc.
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
NOTES
22, 23
18, 19
12
31
43
37
17
22
21
21