MT18LSDT6472G-13ED2 Micron Technology Inc, MT18LSDT6472G-13ED2 Datasheet - Page 11

• Manufacturer Part Number: MT18LSDT6472G-13ED2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT6472G-13ED2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 4831838208
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.43A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 15; 0°C £ T
Table 11: I
SDRAM components only
Notes: 1, 6, 11, 13; notes appear on page 15; 0°C £ T
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT: Any input 0V £ V
other pins not under test = 0V) For inputs: A0-A12, BA0,
BA1, RAS#, CAS#,WE#, CKE0
INPUT LEAKAGE CURRENT: Any input 0V £ V
(All other pins not under test = 0V) For inputs: S#, DQMB
OUTPUT LEAKAGE CURRENT: DQs are disabled;
0V £ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT CS# = HIGH;
CKE = HIGH
SELF REFRESH CURRENT: CKE £ 0.2V
RC =
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature
Relative to V
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
T
t
A
OUT
RC (MIN)
(ambient) . . . . . . . . . . . . . . . . . . . . . .0°C to +70°C
£ V
DD
DD
DD
Q
PARAMETER/CONDITION
SS
Supply
PARAMETER/CONDITION
Specifications and Conditions (128MB)
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
OUT
OUT
t
RCD met; No accesses in progress
= 4mA)
= -4mA)
IN
IN
A
£ V
£ V
t
t
RFC =
RFC = 15.6 µs
£ +70°C
DD
DD
A
(All
£ +70°C; V
t
RFC (MIN)
168-PIN REGISTERED SDRAM DIMM
11
128MB, 256MB, 512MB (x72, ECC)
DD
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
SYMBOL
DD
= V
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . 18W
SYMBOL
V
V
V
I
, V
V
I
I
OZ
I
I
I
I
I
I
I
OH
DD
I
I
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD 1
DD 2
DD 3
DD 4
DD 5
DD 6
DD 7
IH
IL
A
B
DD
Q - +3.3V ±0.3V
Q
1,250
2,700
4,140
-13E
810
36
54
18
MIN
-0.3
-10
-10
2.4
-5
3
2
–
MAX
2,070
2,520
3,780
-133
810
36
54
18
V
DD
MAX
3.6
0.8
0.4
10
10
5
–
+ 0.3
1,710
2,160
3,420
-10E
630
36
54
18
UNITS
µA
µA
µA
V
V
V
V
V
UNITS
©2003, Micron Technology Inc.
mA
mA
mA
mA
mA
mA
mA
NOTES
19, 30, 31
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
22
22
33
33
33
NOTES
30
30
30
30
4