MT16LSDT12864AG-13EC1 Micron Technology Inc, MT16LSDT12864AG-13EC1 Datasheet - Page 14

• Manufacturer Part Number: MT16LSDT12864AG-13EC1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT12864AG-13EC1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
Table 9:
DC Operating Specifications
Table 10:
Table 11:
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
Parameter
Parameter/Condition
Parameter/Condition
Voltage on V
Voltage on inputs NC or I/O pins relative to V
Operating temperature T
Storage temperature (plastic)
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQ pins are
disabled; 0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQ pins are
disabled; 0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
DD
Absolute Maximum DC Ratings
DC Electrical Characteristics and Operating Conditions – 512MB
Notes:1, 5, 6; notes appear on page 18; V
DC Electrical Characteristics and Operating Conditions – 1GB
Notes: 1, 5, 6; notes appear on page 18; V
, V
OUT
OUT
IN
IN
DD
≤ V
≤ V
≤ V
≤ V
Q supply relative to V
OUT
OUT
DD
OUT
DD
OUT
DD
DD
OPR
Q
Q
= 4mA)
= 4mA)
= -4mA)
= -4mA)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
(commercial - ambient)
Command and
address Inputs, CKE
CK, S#
DQMB
DQ
Command and
address Inputs, CKE
CK, S#
DQMB
DQ
SS
SS
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
DD
DD
= V
= V
14
DD
DD
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
V
V
Symbol
Symbol
DD
DD
V
V
V
V
V
V
, V
I
, V
I
V
V
OZ
OZ
OH
OH
I
OL
I
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
IH
IL
I
IL
I
DD
DD
Q
Q
Min
Min
-0.3
-0.3
-40
-20
2.4
-80
-20
-10
-10
2.4
-5
-5
3
2
3
2
–
–
Absolute Maximum Ratings
Min
V
V
-55
. 0
-1
-1
DD
DD
Max
Max
3.6
0.8
0.4
3.6
0.8
0.4
©2002 Micron Technology, Inc. All rights reserved.
40
20
80
20
10
10
5
5
–
–
+ 0.3
+ 0.3
Max
+150
+4.6
+4.6
+65
Units
Units
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
Notes
Notes
Unit
°C
°C
V
V
22
22
33
33
22
22
33
33