MT16LSDT12864AG-13EC1 Micron Technology Inc, MT16LSDT12864AG-13EC1 Datasheet - Page 12

• Manufacturer Part Number: MT16LSDT12864AG-13EC1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT12864AG-13EC1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Operating Mode
Write Burst Mode
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
Table 7:
The normal operating mode is selected by setting M7 and M8 to zero; the other combi-
nations of values for M7 and M8 are reserved for future use and/or test modes. The pro-
grammed burst length applies to both READ and WRITE bursts.
Test modes and reserved states should not be used because unknown operation or
incompatibility with future versions may result.
When M9 = 0, the burst length programmed via M0–M2 applies to both READ and
WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but
write accesses are single-location (non burst) accesses.
CAS Latency Table
Speed
-13E
-133
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
12
CAS Latency = 2
Allowable Operating Clock Frequency (MHz)
≤ 133
≤ 100
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mode Register Definition
©2002 Micron Technology, Inc. All rights reserved.
CAS Latency = 3
≤ 143
≤ 133