MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 2

• Manufacturer Part Number: MT16HTF12864HY-40EB3
• Description: MODULE SDRAM DDR2 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864HY-40EB3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 60ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 976mA
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2:
Table 3:
Table 4:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
Part Number
Part Number
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT16HTF12864H(I)Y-80E__
MT16HTF12864H(I)Y-800__
MT16HTF12864H(I)Y-667__
MT16HTF12864H(I)Y-53E__
MT16HTF12864H(I)Y-40E__
MT16HTF25664H(I)Y-80E__
MT16HTF25664H(I)Y-800__
MT16HTF25664H(I)Y-667__
MT16HTF25664H(I)Y-53E__
MT16HTF25664H(I)Y-40E__
Addressing
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8, 512Mb DDR2 SDRAM
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H128M8, 1Gb DDR2 SDRAM
1
1
Notes:
1. All part numbers end with a two-place code (not shown), designating component and PCB
2. For the latest component data sheets, see Micron’s Web site:
revisions. Consult factory for current revision codes. Example: MT16HTF12864H(I)Y-40EC2.
www.micron.com/products/dram/ddr2.
Module
Density
Module
Density
1GB
1GB
1GB
1GB
1GB
2GB
2GB
2GB
2GB
2GB
Configuration
Configuration
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
2
512Mb (64 Meg x 8)
16K (A0–A13)
4 (BA0, BA1)
1K (A0–A9)
2 (S0#, S1#)
Bandwidth
Bandwidth
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Module
Module
4.3 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
1GB
1KB
8K
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
©2004 Micron Technology, Inc. All rights reserved.
1Gb (128 Meg x 8)
8 (BA0, BA1, BA2)
16K (A0–A13)
1K (A0–A9)
2 (S0#, S1#)
2GB
1KB
(CL -
(CL -
8K
Latency
Latency
t
t
Features
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD -
RCD -
t
t
RP)
RP)