MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 11
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MT16HTF12864HY-40EB3
Manufacturer Part Number
MT16HTF12864HY-40EB3
Description
MODULE SDRAM DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTF12864HY-40EB3
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
976mA
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Serial Presence-Detect
Table 12:
Table 13:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
Parameter/Condition
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current
Power supply current, READ: SCL clock frequency = 100 KHz
Power supply current, WRITE: SCL clock frequency = 100 KHz
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
Notes:
OUT
IN
= 3mA
OUT
= GND to V
1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
= GND to V
and the falling or rising edge of SDA.
sequence to the end of the EEPROM internal erase/program cycle. During the WRITE cycle,
the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resistor, and
the EEPROM does not respond to its slave address.
DD
SS
SS
DD
; V
; V
DDSPD
DDSPD
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
= +1.7V to +3.6V
= +1.7V to +3.6V
11
Symbol
t
Symbol
t
t
t
t
V
HD:DAT
HD:STA
SU:DAT
SU:STO
SU:STA
t
t
t
t
t
DDSPD
HIGH
I
LOW
f
WRC
t
t
WRC) is the time from a valid stop condition of a write
V
I
V
BUF
V
I
CC
I
SCL
CC
AA
DH
I
t
LO
t
SB
OL
t
LI
IH
R
F
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
W
R
V
DDSPD
Min
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
0
–
–
–
–
–
Min
–0.6
0.10
0.05
1.7
1.6
0.4
2
–
× 0.7
Serial Presence-Detect
Max
300
400
0.9
0.3
50
10
–
–
–
–
–
–
–
–
–
©2004 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
3.6
0.4
3
3
4
1
3
Units
+ 0.5
× 0.3
KHz
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
Notes
Units
mA
mA
µA
µA
µA
V
V
V
V
1
2
2
3
4