MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 12
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MT16HTF12864HY-40EB3
Manufacturer Part Number
MT16HTF12864HY-40EB3
Description
MODULE SDRAM DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTF12864HY-40EB3
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
976mA
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 14:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes used by Micron
Total Number of bytes in SPD device
Fundamental memory type
Number of row addresses on assembly
Number of column addresses on assembly
DIMM height and module ranks
Module data width
Module data width (continued)
Module voltage interface levels
SDRAM cycle time,
see byte 18)
SDRAM access from clock,
value, see byte 18)
Module configuration type
Refresh rate/type
SDRAM device width (primary SDRAM)
Error-checking SDRAM data width
Reserved
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
Module thickness
DDR2 DIMM type
SDRAM module attributes
SDRAM device attributes: Weak driver (01) and
50Ω ODT (03)
SDRAM cycle time,
SDRAM access from CK,
MAX CL - 1
SDRAM cycle time,
SDRAM access from CK,
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 14
Description
t
t
t
CK (CL = maximum value,
CK, MAX CL - 1
CK, MAX CL - 2
t
t
AC,
AC, MAX CL - 2
t
AC (CL = maximum
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
12
30mm, dual rank
Entry (Version)
-53E/-40E (4, 3)
No PLL or Reg
-800/-80E/-667
DDR2 SDRAM
-53E/-40E(N/S)
-53E/40E(N/S)
-800 (6, 5, 4)
-667 (5, 4, 3)
7.81µs/SELF
-80E (5, 4)
SSTL 1.8V
-80E/-800
-80E/-800
-53E/-40E
-80E/-667
-53E/-40E
-80E/-800
SODIMM
-80E(N/S)
-80E(N/S)
Non-ECC
4 or 8
-667
-53E
-40E
-667
-53E
-40E
-800
-667
-53E
-40E
-800
-667
-800
-667
128
256
n/a
4, 8
14
10
64
0
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT16HTF12864H(I) MT16HTF25664H(I)
0A
3D
0C
3D
3D
80
08
08
0E
61
40
00
05
25
30
50
40
45
50
60
00
82
08
00
00
04
30
70
38
18
01
04
00
03
01
30
50
40
45
50
60
00
50
00
00
40
45
00
Serial Presence-Detect
©2004 Micron Technology, Inc. All rights reserved.
0A
3D
3D
3D
0C
80
08
08
0E
61
40
00
05
25
30
50
40
45
50
60
00
82
08
00
00
08
30
70
38
18
01
04
00
03
01
30
50
40
45
50
60
00
50
00
00
40
45
00