MT18LSDT6472G-133D2 Micron Technology Inc, MT18LSDT6472G-133D2 Datasheet - Page 3

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MT18LSDT6472G-133D2

Manufacturer Part Number
MT18LSDT6472G-133D2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18LSDT6472G-133D2

Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
2.43A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 6:
Pin numbers are listed in module pinout order; see pin assignment tables on page 2 for more information
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
104, 139-142, 144, 149-151,
28-29, 46-47, 112-113, 130-
58, 60, 65-67, 69-72, 74-77,
2-5, 7-11, 13-17, 19-20, 55-
86-89, 91-95, 97-101, 103-
21-22, 52-53, 105-106,
33–38, 117–121, 123,
153-156, 158-161
42, 79, 125, 163
PIN NUMBERS
126
27, 111, 115
165-167
136-137
39, 122
30, 45
(512MB)
128
131
147
81
83
Pin Descriptions
WE#, CAS#, RAS#
DQMB0- DQMB7
(128MB/ 256MB)
DQ0-DQ63
SYMBOL
BA0, BA1
CK0-CK3
S0#, S2#
(512MB)
SA0-SA2
CB0-CB7
A0-A11
A0-A12
CKE0
REGE
SCL
WP
Output
Output
Input/
Input/
TYPE
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
168-PIN REGISTERED SDRAM DIMM
3
Command Inputs: WE#, CAS#, and RAS# (along with S0#, S2#)
define the command being entered.
Clock: CK0 is distributed through an on-board PLL to all
devices. CK1-CK3 are terminated.
Clock Enable: CKE0 activates (HIGH) and deactivates (LOW)
the CK0 signal. Deactivating the clock provides POWER-
DOWN and SELF REFRESH operation (all device banks idle) or
CLOCK SUSPEND operation (burst access in progress). CKE0 is
synchronous except after the device enters power-down and
self refresh modes, where CKE0 becomes asynchronous until
after exiting the same mode. The input buffers, including
CK0, are disabled during power-down and self refresh
modes, providing low standby power.
Chip Select: S0#, S2# enable (registered LOW) and disable
(registered HIGH) the command decoder. All commands are
masked when S0#, S2# are registered HIGH. S0#, S2# are
considered part of the command code.
Input/Output Mask: DQMB is an input mask signal for write
accesses and an output enable signal for read accesses. Input
data is masked when DQMB is sampled HIGH during a WRITE
cycle. The output buffers are placed in a High-Z state (two-
clock latency) when DQMB is sampled HIGH during a READ
cycle.
Bank Address: BA0 and BA1 define to which device bank the
ACTIVE, READ, WRITE or PRECHARGE command is being
applied.
Address Inputs: A0-A11 (128MB/256MB) or A0-A12 (512MB)
are sampled during the ACTIVE command (device row-
address A0-A11/12) and READ/WRITE command (device
column-address A0-A9 (128MB) or A0- A9/A11 (256MB/
512MB), with A10 defining auto precharge) to select one
location out of the memory array in the respective device
bank. A10 is sampled during a PRECHARGE command to
determine if both device banks are to precharged (A10
HIGH). The address inputs also provide the op-code during a
LOAD MODE REGISTER command.
Write Protect: Serial presence-detect hardware write protect.
Serial Clock for Presence-Detect: SCL is used to synchronize
the presence-detect data transfer to and from the module.
Presence-Detect Address Inputs: These pins are used to
configure the presence-detect device.
Register Enable.
Data I/Os: Data bus.
Check Bits.
128MB, 256MB, 512MB (x72, ECC)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
©2003, Micron Technology Inc.

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