MT18LSDT6472G-133D2 Micron Technology Inc, MT18LSDT6472G-133D2 Datasheet - Page 19

• Manufacturer Part Number: MT18LSDT6472G-133D2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT6472G-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.43A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21: Serial Presence- Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used By Micron
Total Number of SPD Memory Bytes
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of Module Ranks
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
(CAS Latency = 3)
SDRAM Access From Clock,
(CAS Latency = 3)
Module Configuration Type
Refresh Rate/type
SDRAM Width (Primary SDRAM)
Error-Checking SDRAM Data Width
Minimum Clock Delay,
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(CAS Latency = 2)
SDRAM Access From Clock,
(CAS Latency = 2)
SDRAM Cycle Time,
SDRAM Access From Clock,
Latency = 1)
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
t
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
note 1)
Module Rank Density
RRD
DESCRIPTION
t
CK (CAS Latency = 1)
t
t
CK
CK
t
CCD
t
t
t
AC
AC,
AC, (CAS
t
RAS (See
t
t
RCD
RP
7.8/15.6µs/SELF
1, 2, 4, 8, PAGE
256MB/512MB
5.4 (-13E/-133)
10 (-133/-10E)
20 (-133/-10E)
20 (-133/-10E)
6 (-133/-10E)
(VERSION)
7.5 (-133)
7.5 (-13E)
5.4 (-13E)
15 (-13E)
15 (-133)
20 (-10E)
15 (-13E)
45 (-13E)
44 (-133)
50 (-10E)
14(-13E)
SDRAM
7 (-13E)
8 (-10E)
6 (-10E)
128MB/
ENTRY
12or13
10or11
LVTTL
-133
ECC
128
256
2, 3
72
0E
1
0
4
4
1
4
0
0
–
–
168-PIN REGISTERED SDRAM DIMM
19
128MB, 256MB, 512MB (x72, ECC)
MT18LSDT1672G MT18LSDT3272G MT18LSDT6472G
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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©2003, Micron Technology Inc.
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