MT16LSDT6464AY-13ED2 Micron Technology Inc, MT16LSDT6464AY-13ED2 Datasheet - Page 25

• Manufacturer Part Number: MT16LSDT6464AY-13ED2
• Description: MODULE SDRAM 512MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT6464AY-13ED2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 23:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Description
Number of Bytes Used by Micron
Total Number of SPD Memory Bytes
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of Module Banks
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
(CAS Latency = 3)
SDRAM Access from CLK,
(CAS Latency = 3)
Module Configuration Type
Refresh Rate/Type
Sdram Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay From Back-to-Back Random
Column Addresses,
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(CAS Latency = 2) 10 (-133/-10E) A0
SDRAM Access from CLK,
(CAS Latency = 2)
SDRAM Cycle Time,
SDRAM Access From CLK,
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Bank Density
Command And Address Setup Time,
Serial Presence-Detect Matrix
V
DD
= +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
t
t
t
t
CCD
CK
CK
CK, (CAS Latency = 1)
t
t
t
AC
AC
AC, (CAS Latency = 1)
t
RAS (See note 1)
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
t
RCD
t
RP
t
AS,
t
RRD
t
CMS
25
5.4ns (-13E/-133)
1.5ns (-13E/-133)
10ns (-133/-10E)
20ns (-133/-10E)
20ns (-133/-10E)
1, 2, 4, 8, PAGE
6ns (-133/-10E)
7.8125µs/SELF
UNBUFFERED
NONPARITY
7.5ns (-133)
5.4ns (-13E)
7.5ns (13E)
15ns (-13E)
14ns (-13E)
15ns (-133)
20ns (-10E)
15ns (-13E)
45ns (-13E)
50ns (-10E)
44ns (133)
7ns (-13E)
8ns (-10E)
6ns (-10E)
2ns (-10E)
(Version
SDRAM
256MB
Entry
1 or 2
LVTTL
NONE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128
256
2, 3
13
10
64
0E
0
8
1
4
0
0
MT8LSDT3264A
0D
0A
A0
2D
2C
80
08
04
01
40
00
01
70
75
80
54
60
00
82
08
00
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14
32
40
15
20
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
MT16LSDT6464A
0D
0A
A0
2D
2C
80
08
04
02
40
00
01
70
75
80
54
60
00
82
08
00
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14
32
40
15
20