MT4VDDT3264HY-335F2 Micron Technology Inc, MT4VDDT3264HY-335F2 Datasheet - Page 18

• Manufacturer Part Number: MT4VDDT3264HY-335F2
• Description: MODULE DDR 256MB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3264HY-335F2

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 780mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1231; MT4VDDT3264HY-335F2

Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29; notes appear on pages 19–22; 0°C
pdf: 09005aef8086ea3d, source: 09005aef8086ea0b
DD4C8_16_32x64HG.fm - Rev. C 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command
delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ
command
Operating Conditions (Continued)
DD
64MB
128MB,
256MB
64MB
128MB,
256MB
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
t
XSNR
XSRD
MRD
t
RPRE
REFC
RPST
t
WTR
t
QHS
RAP
RCD
RRD
REFI
VTD
IPW
RAS
t
t
RFC
WR
QH
na
RC
RP
T
t
t
0.25
QHS
t
200
HP -
2.2
0.9
0.4
0.4
A
12
42
15
60
72
15
15
12
15
75
QH -
0
1
0
18
-335
+70°C; V
t
70,000
DQSQ
MAX
140.6
0.55
70.3
15.6
1.1
0.6
0.6
7.8
64MB, 128MB, 256MB (x64, SR)
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
= V
t
t
MIN
0.25
t
QHS
HP -
200
2.2
0.9
0.4
0.4
QH -
15
40
15
60
75
15
15
15
15
75
0
1
0
DD
-262
Q = +2.5V ±0.2V
t
DQSQ
120,00
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
0
t
MIN
t
0.25
QHS
HP -
t
200
2.2
0.9
0.4
0.4
15
40
20
65
75
20
20
15
15
75
QH -
-26A/-265
0
1
0
©2004 Micron Technology, Inc. All rights reserved.
t
120,000
DQSQ
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
22, 23
31, 49
18, 19
44
39
39
17
22
21
21
21
21