MT9VDDT6472AY-40BF1 Micron Technology Inc, MT9VDDT6472AY-40BF1 Datasheet - Page 23

• Manufacturer Part Number: MT9VDDT6472AY-40BF1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472AY-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1178; MT9VDDT6472AY-40BF1

Table 17: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 18: EEPROM Operating Modes
pdf: 09005aef80a43e7d, source: 09005aef80a43d77
DDA9C16_32_64x72AG.fm - Rev. B 9/04 EN
SELECT CODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
MODE
t SU:STA
Figure 13: SPD EEPROM Timing Diagram
RW BIT
1
0
1
1
0
0
t F
t HD:STA
128MB, 256MB, 512MB (x72, ECC, SR), PC3200
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
t HD:DAT
BYTES
b7
DEVICE TYPE IDENTIFIER
1
0
23
1
1
1
1
16
1
t DH
b6
0
1
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-Pin DDR SDRAM UDIMM
t SU:DAT
b5
1
1
b4
0
0
INITIAL SEQUENCE
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
UNDEFINED
b1
RW
RW
RW
b0