DS1972-F3+ Maxim Integrated Products, DS1972-F3+ Datasheet - Page 7

• Manufacturer Part Number: DS1972-F3+
• Description: IBUTTON EEPROM 1KBit F3
• Manufacturer: Maxim Integrated Products
• Series: iButton®r

Specifications of DS1972-F3+

• Rohs Information: IButton RoHS Compliance Plan
• Memory Size: 128B
• Memory Type: EEPROM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data memory and registers are located in a linear
address space, as shown in Figure 5. The data memory
and the registers have unrestricted read access. The
DS1972 EEPROM array consists of 18 rows of 8 bytes
each. The first 16 rows are divided equally into four
memory pages (32 bytes each). These four pages are
the primary data memory. Each page can be individu-
ally set to open (unprotected), write protected, or
EPROM mode by setting the associated protection byte
in the register row. The last two rows contain protection
registers and reserved bytes. The register row consists
of 4 protection-control bytes, a copy-protection byte,
the factory byte, and 2 user byte/manufacture ID bytes.
The manufacturer ID can be a customer-supplied iden-
tification code that assists the application software in
Figure 5. Memory Map
* Once programmed to AAh or 55h this address becomes read only. All other codes can be stored, but neither write protect the
address nor activate any function.
ADDRESS RANGE
0000h to 001Fh
0020h to 003Fh
0040h to 005Fh
0060h to 007Fh
0088h to 008Fh
0080h*
0081h*
0082h*
0083h*
0084h*
0085h
0086h
0087h
_______________________________________________________________________________________
TYPE
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
—
R
Memory Access
Data Memory Page 0
Data Memory Page 1
Data Memory Page 2
Data Memory Page 3
Protection-Control Byte Page 0
Protection-Control Byte Page 1
Protection-Control Byte Page 2
Protection-Control Byte Page 3
Copy Protection Byte
Factory Byte. Set at Factory.
User Byte/Manufacturer ID
User Byte/Manufacturer ID
Reserved
DESCRIPTION
1024-Bit EEPROM iButton
identifying the product with which the DS1972 is asso-
ciated. Contact the factory to set up and register a cus-
tom manufacturer ID. The last row is reserved for future
use. It is undefined in terms of R/W functionality and
should not be used.
In addition to the main EEPROM array, an 8-byte
volatile scratchpad is included. Writes to the EEPROM
array are a two-step process. First, data is written to the
scratchpad and then copied into the main array. This
allows the user to first verify the data written to the
scratchpad prior to copying into the main array. The
device only supports full row (8-byte) copy operations.
For data in the scratchpad to be valid for a copy opera-
tion, the address supplied with a Write Scratchpad
command must start on a row boundary, and 8 full
bytes must be written into the scratchpad.
—
—
—
—
55h: Write Protect P0; AAh: EPROM Mode P0;
55h or AAh: Write Protect 80h
55h: Write Protect P1; AAh: EPROM Mode P1;
55h or AAh: Write Protect 81h
55h: Write Protect P2; AAh: EPROM Mode P2;
55h or AAh: Write Protect 82h
55h: Write Protect P3; AAh: EPROM Mode P3;
55h or AAh: Write Protect 83h
55h or AAh: Copy Protect 0080h:008Fh, and Any
Write-Protected Pages
AAh: Write Protect 85h, 86h, 87h;
55h: Write Protect 85h; Unprotect 86h, 87h
—
—
—
PROTECTION CODES
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