S12ME1FY Sharp Microelectronics, S12ME1FY Datasheet

PHOTOCOUP 280V .2A SCR WIDE 6DIP

S12ME1FY

Manufacturer Part Number
S12ME1FY
Description
PHOTOCOUP 280V .2A SCR WIDE 6DIP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of S12ME1FY

Rohs Status
RoHS non-compliant
Voltage - Isolation
4000Vrms
Number Of Channels
1
Voltage - Off State
400V
Output Type
SCR
Current - Gate Trigger (igt) (max)
10mA
Current - Hold (ih)
1mA
Current - Dc Forward (if)
50mA
Current - Output / Channel
100mA
Mounting Type
Through Hole
Package / Case
6-DIP
Other names
425-1239-5
S12ME1/S12ME1F
1. Internal insulation distance : 0.4mm or more
2. Creepage distance : 8mm or more
3. Recognized by UL file No. E64380
1. ON-OFF operation for low power load
2. For triggering medium or high power thyristor and triac
3. Over voltage detection of switching power supplies
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
DIN-VDE0884 approved type is also available as an option.
Approved by BSI ( BS415 : NO.7088, BS7002 : NO.7410 )
Lead forming type ( I type ) and taping reel type ( P type ) of S12ME1/S12ME1F are also available. ( S12ME1I/S12ME1FI,S12ME1P/S12ME1FP )
Space distance : 5mm or more ( S12ME1 )
Applications
Features
8mm or more ( S12ME1F )
European Safety Standard Approved,
Long Creepage Distance Type
Photothyristor Coupler
Anode
mark
Anode
mark
S12ME1
S12ME1F
Outline Dimensions
2.54
2.54
S12ME1
9.22
S12ME1
9.22
6
1
6
1
± 0.25
± 0.25
± 0.5
± 0.5
5
2
5
2
4
3
4
3
0.5
0.5
1.2
1.2
± 0.1
± 0.1
± 0.3
± 0.3
Internal connection
diagram
diagram
Internal connection
: 0 to 13˚
10.16
6
1
0.26
6
1
7.62
7.62
0.26
± 0.1
5
2
± 0.3
± 0.3
5
2
± 0.5
± 0.1
S12ME1/S12ME1F
4
3
4
3
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate
( Unit : mm )
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate

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S12ME1FY Summary of contents

Page 1

S12ME1/S12ME1F Lead forming type ( I type ) and taping reel type ( P type ) of S12ME1/S12ME1F are also available. ( S12ME1I/S12ME1FI,S12ME1P/S12ME1FP ) DIN-VDE0884 approved type is also available as an option. Features 1. Internal insulation distance : 0.4mm ...

Page 2

Absolute Maximum Ratings Parameter Forward current Input Reverse voltage RMS ON-state current 1 Peak one cycle surge current 2 Repetitive Output peak OFF-state voltage 2 Repetitive peak OFF-state reverse voltage 3 Isolation voltage Operating temperature Storage temperature 4 Soldering temperature ...

Page 3

Fig. 1 RMS ON-state Current vs. Ambient Temperature 0.2 0 Ambient temperature T a Fig. 3 Forward Current vs. Forward Voltage 500 200 100 75˚C a 50˚C 0˚C 20 25˚C ...

Page 4

Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature 100 Rated Ambient temperature T a Fig. 9 Repetitive Peak OFF-state Current vs. Ambient ...

Page 5

Basic Operation Circuit Medium/High Power Thyristor Drive Circuit Medium/High Power Triac Drive Circuit ( Zero-cross Operation ) Please ...

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