PC357N3TJ00F Sharp Microelectronics, PC357N3TJ00F Datasheet - Page 4
![PHOTOCOUPLER 1CH TRAN OUT 4-SMD](/photos/22/87/228717/970751405-40_sml.jpg)
PC357N3TJ00F
Manufacturer Part Number
PC357N3TJ00F
Description
PHOTOCOUPLER 1CH TRAN OUT 4-SMD
Manufacturer
Sharp Microelectronics
Specifications of PC357N3TJ00F
Number Of Channels
1
Input Type
DC
Voltage - Isolation
3750Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
200mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
4-SMD
No. Of Channels
1
Isolation Voltage
3.75kV
Input Current
20mA
Output Voltage
80V
Opto Case Style
Mini-Flat
No. Of Pins
4
Approval Bodies
UL
Approval Category
UL Recognised
Collector Emitter
RoHS Compliant
Configuration
1
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
200 mV
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 30 C
Forward Current
5 mA
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Optocoupler Output Type
Phototransistor
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PC357N3TJ00F
Manufacturer:
IXYS
Quantity:
2 928
Part Number:
PC357N3TJ00F
Manufacturer:
SHARP
Quantity:
20 000
■ Absolute Maximum Ratings
■ Electro-optical Characteristics
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Date code "P9" (September 2002) V
*5 From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BV
Transfer
teristics
*2
*3
charac-
Output
Input
Total power dissipation
Operating temperature
Storage temperature
Isolation voltage
Soldering temperature
*1
Forward current
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Parameter
Forward voltage
Reverse current
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Response time
Parameter
Rise time
Fall time
Symbol
V
V
V
iso (rms)
T
T
T
I
P
V
P
I
I
FM
CEO
ECO
P
opr
C
tot
stg
sol
F
C
R
CEO
Symbol
V
BV
BV
:35V.
I
R
CE (sat)
V
CEO
C
C
I
I
t
t
ISO
R
C
CEO
ECO
r
f
F
f
t
*4
−30 to +100
−40 to +125
Rating
3.75
150
170
260
50
70
80
50
1
6
6
V
(T
CE
DC500V, 40 to 60%RH
a
=2V, I
=25˚C)
Unit
mW
mW
mW
mA
mA
kV
I
˚C
˚C
˚C
A
V
V
V
I
F
I
F
V
=20mA, I
I
C
V=0, f=1MHz
=5mA, V
V=0, f=1kHz
E
=0.1mA, I
CE
=10µA, I
Conditions
I
F
=50V, I
C
V
=20mA
=2mA, R
R
=4V
4
C
CE
=1mA
F
F
F
=0
=5V
=0
=0
L
=100Ω
*5
5×10
MIN.
CEO
2.5
80
−
−
−
−
6
−
−
−
−
≥70V.
10
1×10
TYP.
1.2
0.1
0.6
30
−
−
−
−
5
4
3
11
PC357N Series
Sheet No.: D2-A00101EN
MAX.
250
100
1.4
0.2
1.0
10
30
18
18
−
−
−
(T
a
Unit
mA
µA
nA
=25˚C)
pF
pF
µs
µs
V
V
V
V
Ω