PC452TJ0000F Sharp Microelectronics, PC452TJ0000F Datasheet

PHOTOCOUPLER HI VCE TRAN 4-SMD

PC452TJ0000F

Manufacturer Part Number
PC452TJ0000F
Description
PHOTOCOUPLER HI VCE TRAN 4-SMD
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of PC452TJ0000F

Number Of Channels
1
Input Type
DC
Voltage - Isolation
3750Vrms
Current Transfer Ratio (min)
1000% @ 1mA
Voltage - Output
350V
Current - Output / Channel
150mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
1.2V
Output Type
Darlington
Mounting Type
Surface Mount
Package / Case
4-SMD
Configuration
1 Channel
Maximum Collector Emitter Voltage
350 V
Maximum Collector Emitter Saturation Voltage
1.2 V
Isolation Voltage
3750 Vrms
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 30 C
Maximum Fall Time
100 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
300 us
Output Device
Photodarlington
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Transfer Ratio (max)
-
Lead Free Status / Rohs Status
 Details
Other names
425-2591-2
PC452TJ0000F
■ Description
■ Features
PC452J00000F
Series
coupled to a phototransistor.
1 000% at input current of 1.0mA.
1. 4-pin Mini-flat package
2. Double transfer mold package (Ideal for Flow
3. High collector-emitter voltage (V
4. Darlington phototransistor output
5. High isolation voltage between input and output
6. Lead-free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
PC452J00000F Series contains an IRED optically
It is packaged in a 4-pin Mini-flat.
Input-output isolation voltage(rms) is 3.75kV.
Collector-emitter voltage is 350V and CTR is MIN.
Soldering)
(CTR : MIN. 1 000% at I
(V
iso(rms)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
: 3.75kV)
F
=1mA, V
CEO
CE
=2V)
: 350V)
1
■ Agency approvals/Compliance
■ Applications
Mini-flat Package,
Darlinton Phototransistor Output,
High Collector-emitter Voltage
Photocoupler
1. Recognized by UL1577 (Double protection isolation),
2. Package resin : UL flammability grade (94V-0)
1. Telephone sets
2. Copiers, facsimiles
3. Interfaces with various power supply circuits, power
4. Hybrid substrates which reguire high density
file No. E64380 (as model No. PC452)
distribution boards
mounting
PC452J00000F Series
Sheet No.: D2-A00902EN
© SHARP Corporation
Date Jun. 30. 2005

Related parts for PC452TJ0000F

PC452TJ0000F Summary of contents

Page 1

PC452J00000F Series ■ Description PC452J00000F Series contains an IRED optically coupled to a phototransistor packaged in a 4-pin Mini-flat. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 350V and CTR is MIN. 1 000% at input current of ...

Page 2

Internal Connection Diagram 1 2 ■ Outline Dimensions ±0.3 3.6 ±0.25 2. SHARP mark PC452 "s" Anode mark ±0 0.4 Factory identification mark Epoxy resin Product mass : approx. 0.1g Anode 1 4 Cathode 2 ...

Page 3

Date code (2 digit) 1st digit Year of production A.D. Mark A.D Mark 1990 A 2002 P 1991 B 2003 R 1992 C 2004 S 1993 D 2005 T 1994 E 2006 U 1995 F 2007 V 1996 H 2008 ...

Page 4

Absolute Maximum Ratings Parameter Symbol Forward current I F Reverse voltage V R Power dissipation P Collector-emitter voltage V CEO Emitter-collector voltage V ECO Collector current I C Collector power dissipation P C Total power dissipation P tot Operating ...

Page 5

... Model Line-up Taping Package 3 000 pcs/reel 750 pcs/reel Model No. PC452J00000F PC452TJ0000F Please contact a local SHARP sales representative to inquire about production status. PC452J00000F Series 5 Sheet No.: D2-A00902EN ...

Page 6

Fig.1 Forward Current vs. Ambient Temperature − Ambient temperature T Fig.3 Peak Forward Current vs. Duty Ratio 10 000 Pulse width≤100µ 000 100 10 −3 − ...

Page 7

Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 150 100 50 0 − Ambient temperature T Fig.9 Collector Dark Current vs. Ambient Temperature − =200V CE −6 10 −7 10 −8 10 −9 10 −10 ...

Page 8

Fig.13 Collector-emitter Saturation Voltage vs. Forward Current 5 Ic=5mA 10mA 4 30mA 50mA 3 70mA 100mA Forward current I F Remarks : Please be aware that all data in the graph are just ...

Page 9

Design Considerations ● Design guide While operating at I <1.0mA, CTR variation may increase. F Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of ...

Page 10

Manufacturing Guidelines ● Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. (˚C) 300 Terminal : 260˚C peak ...

Page 11

Cleaning instructions Solvent cleaning: Solvent temperature should be 45˚C or below Immersion time should be 3 minutes or less Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, ...

Page 12

Package specification ● Tape and Reel package 1. 3 000pcs/reel Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F Dimensions List A ±0.3 ...

Page 13

Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F Dimensions List A B ±0.3 ±0.1 12.0 5 ...

Page 14

Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for ...

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