LTC3831EGN-1 Linear Technology, LTC3831EGN-1 Datasheet - Page 3
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LTC3831EGN-1
Manufacturer Part Number
LTC3831EGN-1
Description
IC CTRLR SW REG SYNC DDR 16SSOP
Manufacturer
Linear Technology
Datasheet
1.LTC3831EGN-1.pdf
(20 pages)
Specifications of LTC3831EGN-1
Applications
Controller, DDR
Voltage - Input
3 ~ 8 V
Number Of Outputs
1
Voltage - Output
0.4 ~ 4 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
LTC3831EGN-1
Manufacturer:
LT
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Part Number:
LTC3831EGN-1
Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
100
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to ground unless otherwise
specified.
Note 3: Supply current in normal operation is dominated by the current
needed to charge and discharge the external FET gates. This will vary with
the LTC3831-1 operating frequency, operating voltage and the external
FETs used.
Note 4: The LTC3831EGN-1 is guaranteed to meet performance
specifications from 0 C to 70 C. Specifications over the –40 C to 85 C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 5: Rise and fall times are measured using 10% and 90% levels. Duty
cycle and nonoverlap times are measured using 50% levels.
Note 6: Guaranteed by design, not subject to test.
range, otherwise specifications are at T
SYMBOL
V
V
I
I
I
R
t
t
DC
ELECTRICAL CHARACTERISTICS
IN
SS
SSIL
r
NOV
IH
IL
, t
+
MAX
f
PARAMETER
SHDN Input High Voltage
SHDN Input Low Voltage
SHDN Input Current
Soft-Start Source Current
Maximum Soft-Start Sink Current
Undercurrent Limit
R
Driver Rise/Fall Time
Driver Nonoverlap Time
Maximum TG Duty Cycle
+
Input Resistance
A
= 25 C. V
CC
, PV
CONDITIONS
V
V
V
PV
Figure 1, PV
Figure 1, PV
Figure 1, V
SHDN
SS
IMAX
CC1
CC1
The
= 0V, V
, PV
= V
= 7V (Note 7)
= V
CC
CC2
CC
FB
denotes specifications that apply over the full operating temperature
IMAX
, V
CC1
CC1
= 0V (Note 7), PV
= 5V, V
IFB
= PV
= PV
Note 7: PV
95% maximum duty cycle and for the current limit protection circuit to be
active.
Note 8: The current limiting amplifier can sink but cannot source current.
Under normal (not current limited) operation, the output current will be
zero.
Note 9: This IC includes overtemperature protection that is intended to protect
the device during momentary overload conditions. Junction temperature will
exceed 125 C when overtemperature protection is active. Continuous opera-
tion above the specified maximum operating junction temperature may impair
device reliability.
Note 10: The minimum and maximum limits for I
includes the intentional temperature coefficient of 3300ppm/ C. This induced
temperature coefficient counteracts the typical temperature coefficient of the
external power MOSFET on-resistance. This results in a relatively flat current
limit over temperature for the application.
= 0V, V
= 0V, V
CC2
CC2
R
IFB
+ = 1.5V, V
= 5V (Note 5)
= 5V (Note 5)
SS
CC1
= V
= V
CC
must be higher than V
CC1
CC
(Note 8),
= 7V
R
– = GND, unless otherwise noted. (Note 2)
CC
MIN
2.4
–8
25
91
by at least 2V for TG to operate at
53.3
TYP
–12
120
0.1
1.6
80
95
LTC3831-1
MAX
over temperature
MAX
–16
250
250
0.8
1
UNITS
38311f
3
mA
k
ns
ns
%
V
V
A
A