NCP1380CDR2G ON Semiconductor, NCP1380CDR2G Datasheet - Page 7

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NCP1380CDR2G

Manufacturer Part Number
NCP1380CDR2G
Description
IC PWM FLYBCK ISO CM 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP1380CDR2G

Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
65kHz
Voltage - Supply
9.4 V ~ 28 V
Buck
No
Boost
No
Flyback
Yes
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
65kHz
Mounting Style
SMD/SMT
Operating Supply Voltage
- 0.3 V to + 28 V
Supply Current
+/- 30 mA
Maximum Operating Temperature
+ 125 C
Fall Time
25 ns
Minimum Operating Temperature
- 40 C
Rise Time
40 ns
Synchronous Pin
No
Topology
Quasi-Resonant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Duty Cycle
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCP1380CDR2G
Manufacturer:
ON Semiconductor
Quantity:
2 000
Company:
Part Number:
NCP1380CDR2G
Quantity:
2 500
Company:
Part Number:
NCP1380CDR2G
Quantity:
70
ELECTRICAL CHARACTERISTICS
V
CURRENT COMPARATOR − CURRENT SENSE
DRIVE OUTPUT − GATE DRIVE
DEMAGNETIZATION INPUT − ZERO VOLTAGE DETECTION CIRCUIT
TIMING CAPACITOR
3. Guaranteed by design.
4. The peak current setpoint goes down as the load decreases. It is frozen below I
5. If negative voltage in excess to −300 mV is applied to ZCD pin, the current setpoint decrease is no longer guaranteed to be linear
6. Minimum value for T
7. NTC with R
R
V
V
V
I
CS
V
V
V
peak(VCO)
V
ZCD(pdown)
V
Symbol
OPP(MAX)
ZCD(HYS)
DRV(high)
t
DRV(low)
ZCD(TH)
CT(MAX)
CS(stop)
t
R
R
C
BLANK
CT(MIN)
t
t
I
I
outSS
t
V
V
SRC
DEM
= 0 V, V
ILIM
BCS
SNK
t
I
C
SRC
SNK
PAR
out
CT
t
t
CH
CL
r
f
T
fault
110
Propagation Delay
Percentage of maximum peak current level at
which VCO takes over (Note 4)
Setpoint decrease for V
Threshold for immediate fault protection activation
Leading Edge Blanking Duration for V
Drive Resistance
DRV Sink
DRV Source
Drive current capability
DRV Sink
DRV Source
Rise Time (10% to 90%)
Fall Time (90% to 10%)
DRV Low Voltage
DRV High Voltage (Note 6)
ZCD threshold voltage
ZCD hysteresis
Input clamp voltage
High state
Low state
Propagation Delay
Internal input capacitance
Blanking delay after on−time
Timeout after last demag transition
Pulldown resistor (Note 3)
Maximum voltage on C
Source current
Minimum voltage on C
activated
Recommended timing capacitor value
= 1.5 V, C
= 8.8 kW.
J
= 125°C
T
= 680 pF) For min/max values T
T
T
ZCD
pin, discharge switch
pin
(Unless otherwise noted: For typical values T
= −300 mV (Note 5)
CS(stop)
http://onsemi.com
J
= −40°C to +125°C, Max T
7
V
V
V
V
V
V
V
V
C
12 V
C
12 V
V
C
V
C
V
V
I
I
V
−0.3 V
During soft−start
After the end of soft−start
V
V
pin1
pin1
CS
FB
ZCD
CS
DRV
DRV
DRV
DRV
CC
CC
ZCD
ZCD
ZCD
FB
CT
DRV
DRV
DRV
DRV
= 0.4 V, V
< V
> V
increasing
= 0 V
= V
= V
= 3.0 mA
= −2.0 mA
= −300 mV, V
= 10 V
= 2 V
= 10 V
= 2 V
decreasing
increasing
decreasing from 4 V to
= 1 nF, V
= 1 nF, V
= 1 nF, R
= 1 nF
FB(TH)
ILIM
CC(off)
CC(MAX)
Condition
peak(VCO)
to DRV turn−off
CS
+ 0.2 V
DRV
DRV
DRV
J
increasing
= 25°C, V
J
FB
from 0 to
from 0 to
= 150°C, V
= 33 kW
(I
= 4 V,
peak
CC
= cst)
CC
= 12 V, V
1.125
15.4
10.5
−0.9
2.30
5.15
Min
140
= 12 V)
8.4
5.0
35
35
15
28
18
8
ZCD
1.200
17.5
37.5
12.5
13.0
−0.7
3.15
5.40
Typ
125
120
800
500
150
320
220
9.1
5.9
20
40
25
55
35
10
10
41
20
= 0 V, V
1.275
Max
19.6
15.5
−0.3
4.00
5.65
175
250
500
FB
6.7
40
75
60
90
55
12
54
22
90
= 3 V,
Unit
mA
mV
mV
mV
kW
pF
mA
pF
ns
ns
ns
ns
ns
ms
ms
%
%
V
W
V
V
V
V

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