NCP1380CDR2G ON Semiconductor, NCP1380CDR2G Datasheet

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NCP1380CDR2G

Manufacturer Part Number
NCP1380CDR2G
Description
IC PWM FLYBCK ISO CM 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP1380CDR2G

Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
65kHz
Voltage - Supply
9.4 V ~ 28 V
Buck
No
Boost
No
Flyback
Yes
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
65kHz
Mounting Style
SMD/SMT
Operating Supply Voltage
- 0.3 V to + 28 V
Supply Current
+/- 30 mA
Maximum Operating Temperature
+ 125 C
Fall Time
25 ns
Minimum Operating Temperature
- 40 C
Rise Time
40 ns
Synchronous Pin
No
Topology
Quasi-Resonant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Duty Cycle
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
NCP1380CDR2G
Manufacturer:
ON Semiconductor
Quantity:
2 000
Company:
Part Number:
NCP1380CDR2G
Quantity:
2 500
Company:
Part Number:
NCP1380CDR2G
Quantity:
70
NCP1380
Quasi-Resonant
Current-Mode Controller for
High-Power Universal
Off-Line Supplies
powering quasi−resonant converters. Capitalizing on a proprietary
valley−lockout system, the controller shifts gears and reduces the
switching frequency as the power loading becomes lighter. This
results in a stable operation despite switching events always occurring
in the drain−source valley. This system works down to the 4
and toggles to a variable frequency mode beyond, ensuring an
excellent standby power performance.
an Over Power Protection (OPP) circuit which clamps the delivered
power at high−line. Safety−wise, a fixed internal timer relies on the
feedback voltage to detect a fault. Once the timer elapses, the
controller stops and stays latched for option A and C or enters
auto−recovery mode for option B and D.
features a pin to implement either a combined overvoltage /
overtemperature protection (Version A and B) or a combined
brown−out/overvoltage protection (Version C and D).
Features
Typical Applications
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 1
The NCP1380 hosts a high−performance circuitry aimed to
To improve the safety in overload situations, the controller includes
Particularly well suited for adapter applications, the controller
Operation
Efficiency
Versions)
Versions)
Quasi−Resonant Peak Current−Mode Control Operation
Valley Switching Operation with Valley−Lockout for Noise−Immune
Frequency Foldback at Light Load to Improve the Light Load
Adjustable Over Power Protection
Auto−Recovery or Latched Internal Output Short−Circuit Protection
Fixed Internal 80 ms Timer for Short−Circuit Protection
Combined Overvoltage and Overtemperature Protection (A and B
Combined Overvoltage Protection and Brown−Out (C and D
+500 mA / −800 mA Peak Current Source/Sink Capability
Internal Temperature Shutdown
Direct Optocoupler Connection
Extended V
Extremely Low No−Load Standby Power
SO−8 Package
These Devices are Pb−Free and are RoHS Compliant
High Power ac−dc Converters for TVs, Set−Top Boxes etc.
Offline Adapters for Notebooks
CC
Range Operation Up to 28 V
1
th
valley
See detailed ordering and shipping information in the package
dimensions section on page 25 of this data sheet.
8
CONTROLLER FOR HIGH
QUASI−RESONANT PWM
1380X = Specific Device Code
X
A
L
Y
W
G
1
POWER AC−DC WALL
GND
ZCD
ORDERING INFORMATION
CS
FB
PIN CONNECTIONS
= Device Option (A, B, C, or D)
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
1
2
3
4
ADAPTERS
CASE 751
D SUFFIX
SOIC−8
Publication Order Number:
8
7
6
5
DIAGRAMS
8
1
MARKING
CT
FAULT
VCC
DRV
ALYWX
NCP1380/D
1380X
G

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NCP1380CDR2G Summary of contents

Page 1

NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the switching frequency as the power loading becomes ...

Page 2

TYPICAL APPLICATION EXAMPLE HV−Bulk NCP1380 A/B ZCD / OPP OVP / OTP Figure 1. Typical Application Schematic for A and B Versions HV−Bulk NCP1380 C/D ZCD / OPP ...

Page 3

PIN FUNCTION DESCRIPTION Pin N5 Pin Name 1 ZCD Zero Crossing Detection Adjust the over power protection GND 5 DRV 6 V Supplies the controller CC 7 Fault Over voltage and Over temperature protection (A ...

Page 4

INTERNAL CIRCUIT ARCHITECTURE VDD Rpullup FB VDD ICt tpoi nt − Ct Discharge ZCD + − Vth ESD DRV 3 ms blanking end / 4 The 40 ms Time Out ...

Page 5

VDD R pul VDD ICt Ct + − tpoint Ct discharge ZCD + − Vth ESD DRV 3 ms blanking end / 4 The 40 ms Time Out is active ...

Page 6

MAXIMUM RATINGS TABLE Symbol V Maximum Power Supply voltage, V CC(MAX) I Maximum current for V CC(MAX Maximum driver pin voltage, DRV pin, continuous voltage DRV(MAX) I Maximum current for DRV pin DRV(MAX) V Maximum voltage on low ...

Page 7

ELECTRICAL CHARACTERISTICS 1 680 pF) For min/max values T CS fault T Symbol CURRENT COMPARATOR − CURRENT SENSE t Propagation Delay ILIM I Percentage of maximum peak current level at peak(VCO) ...

Page 8

ELECTRICAL CHARACTERISTICS 1 680 pF) For min/max values T CS fault T Symbol FEEDBACK SECTION R Internal pullup resistor FB(pullup) I Pin FB to current setpoint division ratio ratio V FB ...

Page 9

T , JUNCTION TEMPERATURE (°C) J Figure 5. V vs. Junction Temperature CC(on) 1.90 1.80 1.70 1.60 1.50 1.40 1.30 −40 − ...

Page 10

T , JUNCTION TEMPERATURE (°C) J Figure 11. V vs. Junction Temperature ILIM 1.265 1.245 1.225 1.205 1.185 1.165 1.145 1.125 −40 − ...

Page 11

T , JUNCTION TEMPERATURE (°C) J Figure 17. V vs. Junction Temperature ZCD(th) 3.50 3.40 3.30 3.20 3.10 3.0 2.90 −40 − ...

Page 12

T , JUNCTION TEMPERATURE (°C) J Figure 23. I vs. Junction Temperature OTP 10.4 10.2 10.0 9.8 9.6 9.4 9.2 −40 810 805 800 795 790 785 ...

Page 13

The NCP1380 implements a standard current−mode architecture operating in quasi−resonant mode. Due to a proprietary circuitry, the controller valley−jumping instability and steadily locks out in selected valley as the power demand goes down. Once the fourth valley is reached, the ...

Page 14

Figure 26. Operating Valley According to FB Voltage The valley detection is done by monitoring the voltage of the auxiliary winding of the transformer. A valley is detected when the voltage on pin 1 crosses down the 55 mV internal ...

Page 15

As the output load decreases (FB voltage decreases), the valleys are incremented from the first to the fourth. When the fourth valley is reached voltage further decreases below 0.8 V, the controller enters VCO mode. During VCO operation, ...

Page 16

Figure 29. Zoom Valley Transition nd rd Figure 30. Zoom Valley Transition http://onsemi.com 16 ...

Page 17

Figure 32. Zoom 4: 4 Time Out In case of extremely damped free oscillations, the ZCD comparator can be unable to detect the valleys. To avoid such situation, NCP1380 integrates a Time Out function that acts as a substitute clock ...

Page 18

− Vth leakage blanking 3 us pulse DRV Figure 33. Time Out Circuit Figure 34. Time Out Case n51: the 3 demag 5.5 us time out 40 ...

Page 19

Figure 35. Time Out Case n52: the 3 VCO operation occurs for FB voltage lower than 0.8 V (FB decreasing), or lower than 1.4 V (FB increasing). This corresponds to low output power. During VCO operation, the peak current is ...

Page 20

Figure 37 shows the implementation of the fault timer. CS LEB1 R sen se FB/4 ZCD/OPP OPP Soft−start Laux LEB2 V CS(stop) When the current in the MOSFET is higher than “Max Ip” ...

Page 21

Figure 38. Auto−Recovery Short−Circuit Protection on B and D Versions Figure 39. Latched Short−Circuit Protection on A and C Versions http://onsemi.com 21 ...

Page 22

The over power compensation is achieved by monitoring the signal on ZCD pin (pin 1). Indeed, a negative voltage applied on this pin directly affects the internal voltage reference setting the maximum peak current (Figure 40). When the power MOSFET ...

Page 23

OVERVOLTAGE / OVERTEMPERATURE DETECTION (A AND B VERSIONS) Overvoltage and overtemperature detection is achieved by reading the voltage on pin 7 (See Figure 41). VCC VDD Dz I OTP(REF) Fa ult NTC V Vclam p ...

Page 24

OVERVOLTAGE PROTECTION / BROWN−OUT (C AND D VERSIONS) The C and D versions of NCP1380 combine brown−out and overvoltage detection on pin 7. VCC HV−Bulk Dz VOVP Rbou OVP/BO 7 VDD IBO Rbol Vclamp Figure 43. ...

Page 25

... R and R . bou bol ORDERING INFORMATION Device NCP1380ADR2G NCP1380BDR2G NCP1380CDR2G NCP1380DDR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. R bol ) and the bulk R bou Package SOIC− ...

Page 26

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The products described herein (NCP1380), may be covered by one or more of the following U.S. patents; 6,362,067; pending. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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