VND10N06 STMicroelectronics, VND10N06 Datasheet - Page 8

• Manufacturer Part Number: VND10N06
• Description: MOSFET N-CH 60V 10A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VND10N06

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Peak Output: 10A
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Other names: 497-2767-5

Electrical specifications
8/25
Table 7.
Table 8.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
2. Parameters guaranteed by design / characterization.
Table 9.
1. Parameters guaranteed by design / characterization.
Figure 2.
Symbol
Symbol
Symbol
I
V
t
E
T
RRM
T
C
Q
dlim
t
SD
jsh
as
I
rr
jrs
OSS
rr
lim
(2)
(2)
(1)
(1)
(1)
(1)
(1)
(2)
Output capacitance
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
Drain current limit
Step response current
limit
Overtemperature
shutdown
Overtemperature reset
Single pulse
avalanche energy
Dynamic
Source Drain diode
Protections (-40°C < T
Switching waveforms
Parameter
Parameter
Parameter
V
I
I
V
(see
V
V
Starting T
V
SD
SD
DS
DD
IN
IN
IN
= 1 A; V
= 1A; di/dt = 100 A/µs
= 7V; V
= 7 V; V
= 7V R
= 13V; f = 1MHz; V
j
= 30V; T
Figure
< 150°C, unless otherwise specified)
Test conditions
Test conditions
Test conditions
j
gen
= 25°C; V
DS
IN
DS
4)
j
=13V
= V
= 25°C
= 1kΩ; L = 10mH
step from 0 to 13V
IL
DD
IN
= 24V
= 0V
VND10N06 / VND10N06-1
Min.
Min.
Min.
150
135
250
6
Typ.
Typ.
Typ.
0.22
350
125
0.8
3.5
10
12
Max.
Max.
Max.
500
1.6
15
20
Unit
Unit
Unit
µC
mJ
pF
ns
µs
°C
°C
V
A
A