VND10 STMICROELECTRONICS [STMicroelectronics], VND10 Datasheet

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VND10

Manufacturer Part Number
VND10
Description
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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DESCRIPTION
The VND10BSP is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on
overtemperature conditions and stuck-on to V
BLOCK DIAGRAM
March 1998
VND10BSP
OUTPUT CURRENT (CONTINUOUS):
14A @ T
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST
DEMAGNETIZATION
VERY LOW STAND-BY POWER
DISSIPATION
TYPE
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
c
= 85
V
40 V
state, open load in off state,
DSS
o
C PER CHANNEL
R
0.1
DS(on
)
3.4 A
I
OUT
26 V
V
CC
CC
.
10
PowerSO-10
VND10BSP
1
1/9

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VND10 Summary of contents

Page 1

... INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit ...

Page 2

... VND10BSP ABSOLUTE MAXIMUM RATING Symbol V Drain-Source Breakdown Voltage (BR)DSS I Output Current (cont OUT I (RMS) RMS Output Current at T OUT I Reverse Output Current Input Current IN -V Reverse Supply Voltage CC I Status Current STAT V Electrostatic Discharge (1 100 pF) ESD P Power Dissipation at T ...

Page 3

... Test Conditions R = 2.7 out R = 2.7 out R = 2.7 out R = 2.7 out R = 2.7 out R = 2.7 out Test Conditions - VND10BSP Max 1.65 Max unless otherwise specified) Min. Typ. Max 3.4 5 0.065 0.1 35 100 1 Min. Typ. Max 200 28 110 360 ...

Page 4

... VND10BSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol Parameter V Status Voltage Output STAT Low V Under Voltage Shut USD Down V Status Clamp Voltage SCL T Thermal Shut-down TSD Temperature T Thermal Shut-down SD(hyst.) Hysteresis T Reset Temperature R V Open Voltage Level OL I Open Load Current ...

Page 5

... CC demag demag (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of V solution allows the use of a standard diode. VND10BSP , V CC demag CC THE DEVICE AGAINST BATTERY is seen by the device ...

Page 6

... VND10BSP TRUTH TABLE Normal Operation Under-voltage Thermal Shutdown Channel 1 Channel 2 Open Load Channel 1 Channel 2 Output Shorted to V Channel 1 CC Channel 2 (**) with additional external resistor. Figure 1: Waveforms 6/9 INPUT 1 INPUT 2 OUTPUT 1 OUTPUT ...

Page 7

... Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 3: Typical Application Circuit With Separate Signal Ground VND10BSP 7/9 ...

Page 8

... VND10BSP Power SO-10 MECHANICAL DATA DIM. MIN. A 3.35 A1 0.00 B 0.40 c 0.35 D 9.40 D1 7.40 E 9.30 E1 7.20 E2 7.20 E3 6. 1.25 H 13 8/9 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.27 1.35 14.40 0.50 1. SEATING PLANE DETAIL "A" DETAIL "A" inch MIN. TYP. 0.132 ...

Page 9

... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SGS-THOMSON Microelectronics GROUP OF COMPANIES . . . VND10BSP 9/9 ...

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