VN750S-E STMicroelectronics, VN750S-E Datasheet - Page 7

• Manufacturer Part Number: VN750S-E
• Description: IC DRIVER HIGH SIDE 8-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN750S-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Supply Voltage (min): 5.5 V
• Supply Current: 3.5 mA
• Maximum Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 30000 ns
• Maximum Turn-on Delay Time: 40000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 6A
• Output Resistance: 0.06ohm
• Input Delay: 40µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Driver Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN750-E
2.2
2.3
Table 5.
Power
V
Symbol
USDhyst
V
V
USD
CC
Table 3.
Thermal data
Table 4.
1. When mounted on a standard single-sided FR-4 board with 0.5cm
2. When mounted on a standard single-sided FR-4 board with 6cm
Electrical characteristics
Values specified in this section are for 8 V<V
stated.
Electrical characteristics
Operating supply voltage
Undervoltage shutdown
Undervoltage shutdown
hysteresis
Symbol
E
E
Symbol
R
R
R
mounting and no artificial air flow.
mounting and no artificial air flow.
T
P
MAX
MAX
T
T
thj-case
thj-amb
thj-lead
stg
tot
c
j
Parameter
Maximum switching energy
(L=1.8 mH; R
T
Maximum switching energy
(L=2.46 mH; R
T
Power dissipation T
Junction operating temperature
Case operating temperature
Storage temperature
jstart
jstart
Absolute maximum ratings (continued)
Thermal data
Thermal resistance junction-case
Thermal resistance junction-lead
Thermal resistance junction-ambient
=150 °C; I
=150 °C; I
L
Parameter
=0 Ω; V
L
L
L
Parameter
=0 Ω; V
=9 A)
=9 A)
C
=25°C
Doc ID 10891 Rev 4
bat
bat
=13.5 V;
=13.5 V;
Test conditions
CC
<36 V; -40 °C< T
PENTAWATT
PENTAWATT
62.1
62.1
2.1
2
4.2
-
of Cu (at least 35µm thick). Horizontal
2
of Cu (at least 35µm thick). Horizontal
Internally limited
Max. value
- 40 to 150
- 55 to 150
Value
100
j
Min.
5.5
<150 °C, unless otherwise
3
Electrical specifications
P
52.1
P
37
2
2.1
2
138
PAK
60
PAK
-
(2)
(1)
Typ.
0.5
13
4
77.1
PPAK
44
PPAK
2.1
138
-
60
(4)
(2)
Max.
5.5
36
°C/W
°C/W
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
°C
W
Unit
7/37
V
V
V