VN750S-E STMicroelectronics, VN750S-E Datasheet - Page 11

IC DRIVER HIGH SIDE 8-SOIC

VN750S-E

Manufacturer Part Number
VN750S-E
Description
IC DRIVER HIGH SIDE 8-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheets

Specifications of VN750S-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
60 mOhm
Current - Peak Output
6A
Voltage - Supply
5.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Supply Voltage (min)
5.5 V
Supply Current
3.5 mA
Maximum Power Dissipation
4200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
30000 ns
Maximum Turn-on Delay Time
40000 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Device Type
High Side
Module Configuration
High Side
Peak Output Current
6A
Output Resistance
0.06ohm
Input Delay
40µs
Output Delay
30µs
Supply Voltage Range
5.5V To 36V
Driver Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VN750S-E
Manufacturer:
ST
0
VN750-E
Table 7.
Table 8.
Table 9.
ISO T/R 7637/1
ISO T/R 7637/1
test pulse
test pulse
Class
C
E
3b
3a
3b
4
5
1
2
4
5
Electrical transient requirements on V
Electrical transient requirements on V
Electrical transient requirements on V
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
+26.5 V
+25 V
-4 V
I
C
C
C
C
C
C
I
Doc ID 10891 Rev 4
+46.5 V
+50 V
-5 V
II
C
C
C
C
C
E
II
Test levels results
Contents
Test levels
+66.5 V
+75 V
-6 V
III
CC
CC
CC
pin (part 1/3) (continued)
pin (part 2/3)
pin (part 3/3)
III
C
C
C
C
C
E
+86.5 V
+100 V
Electrical specifications
-7 V
IV
100 ms, 0.01 Ω
Delays and
400 ms, 2 Ω
impedance
0.1 µs 50 Ω
IV
C
C
C
C
C
E
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